Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

Study on a-plane GaN etching residual stress using Raman scattering

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Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

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The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Study on the Dislocations in GaN Films by Wet-Chemical Etching

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The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

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Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment with an Optimized Surface Structure Design

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Study of Stress in Ammonothermal Non-Polar and Semi-Polar GaN Crystal Grown on HVPE GaN Seeds

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering