Abstract:An area efficient multizone gradient-modulated guard ring (MGM-GR) edge termination technique is proposed, fabricated, and analyzed for 10-kV class silicon carbide devices without extra process steps or masks, which provides a better tradeoff between near ideal blocking capabilities and technological process complexity. The edge termination region is divided into multiple zones by employing MGM-GR technique, which forms a similar linearly graded doping profile to relieve the amount of electric field crowding at the periphery of the active area and achieve a maximum blocking voltage with wide tolerance to implantation dose. The proposed device shows not less than a 35% reduction in edge termination area in comparison with a conventional equally spaced ring at a breakdown voltage of 10 kV. Moreover, MGM-GR shows good tolerances to breakdown voltage for total implant dose and interface charges. With the application of MGM-GR technique to SiC MOSFET with a 100- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−</sup> epilayer doped to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5 \times 10^{14}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> , the measured breakdown voltage is 13.6 kV at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula> . This voltage is nearly 95% of the theoretical value calculated for a 1-D structure. Simulated and measured characteristics show that MGM-GR structure is a candidate for an ultrahigh voltage power device to maximize power density and driving down system complexity.

A Simple Method to Design the Single-Mask Multi-Zone Junction Termination Extension for High-Voltage IGBT

Design and Optimization of Linearly Graded-Doping Junction Termination Extension for 3.3-Kv-class Igbts

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

A New Edge Termination Technique for High-Voltage Devices in 4H-Sic–multiple-floating-zone Junction Termination Extension

Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors

Implantation-free SiC Thyristor with Single-Mask 3D Termination Near 10 Kv

Enhanced On-State Performance Trench IGBT with a Self-Aligned P Base

High Frequency 700v Powerbrane Ligbts In 0.35 Mu M Bulk Cmos Technology

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Practical One-Step Solution of Smoothly Tapered Junction Termination Extension for High Voltage SiC Gate Turn-off Thyristor

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Termination Design of 6.5kV SiC MOSFET with Epitaxial Current Spreading Layer

Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination

Optimized Design of Single Trench Termination Combined with P-type Buried Layers for Power MOSFETs

An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-Sic Power Devices

Improved Etched Multistep JTE for UHV SiC Power Devices

Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

A Multiple-Ring-Modulated JTE Technique for 4H-Sic Power Device with Improved JTE-Dose Window

A Novel 3300V Trench IGBT with Hole Extraction Structure for Low Power Loss

Design Of Dual-Gate Superjunction Igbt Towards Fully Conductivity-Modulated Bipolar Conduction And Near-Unipolar Turn-Off