Abstract:Extended defects, like threading dislocations, are detrimental to the performance of optoelectronic devices. In the scanning electron microscope, dislocations are traditionally imaged using diodes to monitor changes in backscattered electron intensity as the electron beam is scanned over the sample, with the sample positioned so the electron beam is at, or close to the Bragg angle for a crystal plane/planes. Here, we use a pixelated detector instead of single diodes, specifically an electron backscatter diffraction (EBSD) detector. We present postprocessing techniques to extract images of dislocations and surface steps, for a nitride thin film, from measurements of backscattered electron intensities and intensity distributions in unprocessed EBSD patterns. In virtual diode (VD) imaging, the backscattered electron intensity is monitored for a selected segment of the unprocessed EBSD patterns. In center of mass (COM) imaging, the position of the center of the backscattered electron intensity distribution is monitored. Additionally, both methods can be combined (VDCOM). Using both VD and VDCOM, images of only threading dislocations, or dislocations and surface steps can be produced, with VDCOM images exhibiting better signal-to-noise. The applicability of VDCOM imaging is demonstrated across a range of nitride semiconductor thin films, with varying surface step and dislocation densities.

Diffraction Contrast in Reflection Electron Microscopy—ii. Surface Steps and Dislocations under the Surface

The image contrast of surface steps in reflection electron microscopy

The Surface Step: Its Strain Field and REM Image Contrast Splitting

Diffraction contrast in reflection electron microscopy—I. Screw dislocation

Fluorescence emission difference with defocused surface plasmon-coupled emission microscopy.

Experimental studies of atomic step contrast in reflection electron microscopy (REM)

Effects of Surface Stress Relaxation on Reflection Electron Microscopy Images of Normal Emerging Edge Dislocations

Surface Resonance Effects and Beam Convergence in Rem

Thermal diffuse scattering and REM image-contrast preservation

Reflection electron imaging of free surfaces and surface/dislocation interactions

Multiple scattering simulation of electron channelling contrast images of dislocations at interfaces

Atomic Steps on the Mgo(100) Surface

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Anomalous Spiral Motion of Steps Near Dislocations on Silicon Surfaces

Identification of Dislocations on Crystal Surfaces

Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM

Reflection Electron Microscopy Observations of Dislocations and Dislocation Motion in Zinc Oxide

Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction

Surface States Scattering from A Step Defect in the Topological Insulator Bi2te3

Imaging Nanometer Phonon Softening at Crystal Surface Steps with 4D Ultrafast Electron Microscopy

Imaging Surfaces with Reflected Electrons from A Field Emission Scanning Tunnelling Microscope: Image Contrast Mechanisms