Abstract:Electron microscopy has been revolutionized by the advent of the aberration corrector and advances in detector both for imaging and spectroscopy. Aberration correction dramatically improved spatial resolution into the sub-ångstrom regime, while new detectors have unlocked information about materials that was previously only imaginable.While these recent advances have proven essential to the atomic scale characterization of materials, many measurements have remained largely semi-quantitative. In particular, accuracy and precision for scanning transmission electron microscopy (STEM) was significantly hampered by the presence of sample drift and scan distortion. Until recently, this limitation has obscured the capabilities to characterize minute changes to the atomic structure that can ultimately define material properties. In this talk, we will introduce revolving scanning transmission electron microscopy (RevSTEM) for the characterization of semiconductors. The method uses a series of fast-acquisition STEM images, but with the scan coordinates rotated between successive frames. This scan rotation introduces a concomitant change in image distortion that is then used to analyze the sample drift rate and direction. Multiple case studies will be presented to demonstrate the power of this technique to characterize electronic materials. For example, we will show how picometer level precision and accuracy enabled the capability to directly quantify ferroelectric HfO2 thin films. We will also show how RevSTEM images can be used to accurately determine crystallographic parameters in real-space, and to determine the structural origins of polarization. When combined with modern spectroscopy tools, the technique can directly inform growth mechanisms in AlN based materials for fabrication of quantum well structures. Specifically, We will show the interface quality between various AlGaN/AlN quantum wells using a combination of high-angle annular dark-field (HAADF) imaging and energy dispersive X-ray spectroscopy (EDS). We will show that we can directly measure the lattice parameters for each layer and how they vary across each AlN/AlGaN interface. Using EDS, we correlate the lattice parameters and lattice parameter values to the chemical composition in each layer. We show that throughout multiple quantum well structures, there is an asymmetrical interface with a diffusion of Ga on one side of the AlGaN layer. Further, we will discuss fluctuation in the composition present throughout each layer and the role on the local strain distribution.

Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM

STEM Imaging of Lattice Fringes and beyond in a UHR In-Lens Field-Emission SEM

A New Insight into Largely Defocused HAADF-STEM Imaging and Visualization of Strain Field

Aberration corrected STEM and EELS: Atomic scale chemical mapping

Aberration corrected STEM by means of diffraction gratings

Seeing into Materials with Aberration-corrected STEM and First-Principles Theory

Imaging, Core-Loss, and Low-Loss Electron-Energy-Loss Spectroscopy Mapping in Aberration-Corrected STEM

Quantifying the Structure and Chemistry of Semiconductor Devices with the Latest Advancements in Scanning Transmission Electron Microscopy

Characterization of extended defects in 2D materials using aperture-based dark-field STEM in SEM

HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale

Crystal lattice image reconstruction from Moiré sampling scanning transmission electron microscopy

Effects of Electron Microscope Parameters and Sample Thickness on High Angle Annular Dark Field Imaging

Amplitude Contrast Imaging in High-Resolution Transmission Electron Microscopy of Ferroelectric Superlattice Film

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy

Extraction of Structural and Chemical Information from High Angle Annular Dark-Field Image by an Improved Peaks Finding Method.

Electron Crystallographic Investigation of Crystals on the Mesostructural Scale

Moiré fringe imaging of heterostructures by scanning transmission electron microscopy

Tracking Atoms, Vacancies and Electrons via Aberration-corrected Microscopy and First-Principles Theory

Identifying Dislocations and Stacking Faults in Gan Films by Scanning Transmission Electron Microscopy

Real‐Space Tilting Method for Atomic Resolution STEM Imaging of Nanocrystalline Materials

STEM High Angle Annular Dark-Field Imaging