Abstract:Physical properties of ZnO thin films are of great importance for their potential application. In this paper, we reported the electrical and optical properties of undoped ZnO films with a high dependence oil the nucleation and growth kinetics. These ZnO films were deposited on glass substrates within the temperature range of 250-350 degrees C by pulsed-spray evaporation chemical vapor deposition (PSE-CVD). X-ray diffraction (XRD) shows that ZnO films grow in the c-axis orientated hexagonal structure. The inspection of the surface morphology with scanning electron micrographs (SEM) shows a substantial effect of the growth temperature, which was directly correlated with the nucleation kinetics. A comprehensive nucleation and growth process was also proposed for the interpretation of changeable film morphology and corresponding electrical conductivity. The films deposited at intermediate growth temperatures of 310-340 degrees C show compact structures and consequent high electrical conductivity, Which Was Still improved with increase of film thickness. Ill contrast to the electrical conductivity, the optical hand gal) rather shows a correlation with the size of the crystals forming the films rather than with their arrangement. The band gap energy decreases from 3.56 to 3.42 eV toward the bulk value Upon the increase of the crystallite size from 15 to 30 nm.

Dependence of conduction type of ZnO films prepared by sputtering a Zn3As2/ZnO target on substrate temperature and thermal treatment

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets

Effect of Annealing on Conductivity Behavior of Undoped Zinc Oxide Prepared by Rf Magnetron Sputtering

p-Type conduction in Al–N co-doped ZnO films

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Effect of Substrate Temperature on Structural, Electrical and Optical Properties of Al-N Co-Doped Zno Thin Films

Fabrication of P-Type ZnO Thin Films Via DC Reactive Magnetron Sputtering by Using Na As the Dopant Source

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

Temperature Effect on the Electrical, Structural and Optical Properties of N-Doped Zno Films by Plasma-Free Metal Organic Chemical Vapor Deposition

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

High Quality P-Type Zno Film Growth by A Simple Method and Its Properties

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Properties of N-doped ZnO thin films in annealing process

Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO：N Film Produced by Annealing Treatment

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

The study of rapid thermal annealing on arsenic-doped ZnO for the p-type ZnO formation