Effects of Source Materials and Container on Growth Process of Sic Crystal

Junlin Liu,Jiqiang Gao,Jikuan Cheng,Xian Jiang,Jianfeng Yang,Guanjun Qiao

DOI: https://doi.org/10.1021/cg060163k

IF: 4.01

2006-01-01

Crystal Growth & Design

Abstract:Nucleation of SiC polycrystals was investigated using TaC and graphite lids. TaC and graphite containers were also used to compare the growth rates of SiC crystal in four systems ( TaC + SiC, C + SiC, TaC + Si + SiC, and C + Si + SiC systems). The experimental results indicated that graphite lids provide growth conditions for SiC polycrystals that restrict the radial direction growth of seed. The TaC lid can restrain nucleation of SiC polycrystals, which creates better growth conditions for seed along the radial direction. The growth rates of SiC crystal for the TaC + Si + SiC and C + Si + SiC systems are higher than those of the TaC + SiC and C + SiC systems.