Abstract:We present a comprehensive investigation of non-equilibrium effects and self-heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron maybe deposited in a quantum dot or metal island, with an extra energy usually of the order of the Coulomb charging energy, which is much higher than the temperature in typical experiments. The hot electron may relax through three channels: tunneling back and forth to the feeding lead (or island), emitting phonons, and exciting background electrons. Depending on the magnitudes of the rates in the latter two channels relative to the device operation frequency and to each other, the system may be in one of three different regimes: equilibrium, non-equilibrium, and self-heating (partial equilibrium). In the equilibrium regime, a hot electron fully gives up its energy to phonons within a pump cycle. In the non-equilibrium regime, the relaxation is via tunneling with a distribution of characteristic rates; the approach to equilibrium goes like a power law of time (frequency) instead of an exponential. This channel is plagued completely in the continuum limit of the single-electron levels. In the self-heating regime, the hot electron thermalizes quickly with background electrons, whose temperature Te is elevated above the lattice temperature Tol. We have calculated the coefficient in the well-known T5 law of energy dissipation rate, and compared the results to experimental values for aluminum and copper islands and for a two-dimensional semiconductor quantum dot. Moreover, we have obtained different scaling relations between the electron temperature, the operation frequency and device size for various types of devices.

Coulomb-controlled Single Electron Field Emission Via a Freely Suspended Metallic Island.

P1&#x2013;21: Field Electron Emission under Coulomb Blockade in a Suspended Metallic Island

Periodic Field Emission from an Isolated Nano-Scale Electron Island

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Coulomb blockade in open superconducting islands on InAs nanowires

Coulomb-blockade-controlled single-electron point source

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Coulomb blockade in field electron emission from carbon nanotubes

Supercurrent transport through 1$e$-periodic full-shell Coulomb islands

Nanoelectromechanical Systems As Single Electron Switches and Field Emitters

Non-equilibrium Effects and Self-Heating in Single-Electron Coulomb Blockade Devices

Single-electron Tunneling Effects in a Metallic Double Dot Device

Field Emission from Nanomechanically Modulated Electron Islands

Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles

Fingerprinting the Electronic Wavefunctions of Ultra-Small Conductors

Micromechanical electrometry of single-electron transistor island charge

Dopant-controlled single-electron pumping through a metallic island

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Dynamical Coulomb Blockade Observed in Nano-Sized Electrical Contacts

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Feedback-charging a metallic island