Carlos P. Herrero,Gerd Schon,Andrei D. Zaikin
Abstract:We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the free energy of this system and the average charge on the island as a function of an external bias voltage. In much of the parameter range an extrapolation to the ground state is possible. Our results for the effective charging energy for strong tunneling are compared to earlier -- in part controversial -- theoretical predictions and Monte Carlo simulations.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is related to the charge fluctuation in the single - electron box under the strong tunneling effect. Specifically, through the quantum Monte Carlo simulation method, the researchers explored how the system's free energy and the average charge on the island change with the external bias voltage under different tunneling intensities. The main focus of the research is on the effective charging energy under strong tunneling conditions, and it is compared with previous theoretical predictions and other Monte Carlo simulation results.
### Research Background
The charging effect in single - electron devices has received extensive attention in recent years. On the one hand, it is because of its potential practical application prospects, and on the other hand, it is because of the interesting theoretical problems involved. These mesoscopic tunnel junctions are typical examples of discrete charge states and dissipation phenomena in macroscopic quantum systems. Modern lithography techniques can fabricate tunnel junctions with extremely low capacitance (about \(10^{-15}-10^{-16}\) F). In these systems, when the temperature \(T < E_C/k_B\sim1 - 10\) K, single - electron tunneling (SET) is strongly influenced by the Coulomb interaction.
### Main Problems
1. **Charge Fluctuation under Strong Tunneling Conditions**: Under strong tunneling conditions, electron tunneling causes strong fluctuations in the charge on the island. The researchers hope to obtain, through quantum Monte Carlo simulation, how the system's free energy and the average charge on the island change with the external bias voltage under any tunneling intensity.
2. **Renormalization of Effective Charging Energy**: For strong tunneling conditions, the renormalization of the effective charging energy \(E^*_C\) is a key issue. Previous theoretical predictions are controversial, so numerical simulations are required to verify and provide more accurate results.
3. **Behavior at Low Temperatures**: The researchers also hope to understand how the system's effective charging energy changes at low - temperature conditions and verify the effectiveness of different theoretical methods (such as perturbation expansion, renormalization group analysis, etc.).
### Research Methods
In order to cover different situations from weak to strong tunneling, the researchers adopted the quantum Monte Carlo simulation method. Through this numerical method, the researchers can calculate the system's free energy and the average charge on the island under different temperatures and tunneling intensities, and further derive the effective charging energy \(E^*_C\).
### Main Formulas
- **Definition of Effective Charging Energy**:
\[
E^*_C(T)=\frac{1}{2}\left.\frac{\partial^2F}{\partial n_G^2}\right|_{n_G = 0}=E_C\left(1-\left.\frac{\partial\langle n\rangle}{\partial n_G}\right|_{n_G = 0}\right)
\]
- **Approximation in the High - Temperature Limit**:
\[
\tilde{E}_C(T)=\frac{E_C}{1 + 2\alpha_t\beta E_C}
\]
- **Relationship in the Low - Temperature Limit**:
\[
Z\simeq\sqrt{\frac{\pi}{\beta\tilde{E}_C(T)}}\sum_m\exp\left(2\pi i m n_G-\frac{\pi^2m^2}{\beta\tilde{E}_C(T)}\right)
\]
Through these formulas and numerical simulations, the researchers hope to comprehensively understand the behavior of the single - electron box under strong tunneling conditions and provide an important reference for future theoretical and experimental research.