Abstract:By using the drone-fermion representation and the Schwinger-Keldysh approach, we calculate the current noise and the charge noise for a single-electron transistor in the non-equilibrium state in the presence of large quantum fluctuation of island charge. Our result interpolates between those of the "orthodox theory" and the "co-tunneling theory". We find the following effects which are not treated by previous theories: (i) At zero temperature T=0 and at finite applied bias voltage $|eV| \gg T_{K}$, where $T_{K}$ is the "Kondo temperature", we find the Fano factor is suppressed more than the suppression caused by Coulomb correlation both in the Coulomb blockade regime and in the sequential tunneling regime. (ii) For $T \gg |eV|/2 \gg T_{K}$, the current noise in the presence of large charge fluctuation is modified and deviates from the prediction of the orthodox theory. However, the Fano factor coincides with that of the orthodox theory and is proportional to the temperature. (iii) For $eV, T \lesssim T_{K}$, the charge noise is suppressed due to the renormalization of system parameters caused by quantum fluctuation of charge. We interpret it in terms of the modification of the "unit" of the island charge.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the behavior of current noise and charge noise when there are a large number of quantum fluctuations in the island charge in a single - electron transistor (SET) under non - equilibrium conditions. Specifically, the authors use the slave - fermion representation and the Keldysh - Schwinger method to calculate these noise characteristics, especially in the transition region between the Coulomb blockade and the sequential tunneling mechanisms.
### Research Background
On a small metal island, when the charging energy \(E_C\) exceeds the temperature \(T\), the Coulomb interaction will affect the transmission characteristics through the island. This phenomenon is known as Coulomb blockade (CB). The single - electron transistor (SET) is a simple example for studying strongly - correlated systems and can be brought into a non - equilibrium state by applying a bias voltage. Early studies mainly focused on cases where the tunnel conductance was very small, that is, cases where high - order quantum fluctuations could be ignored. However, in recent years, quantum fluctuations have attracted wide attention, especially in the weak tunneling region (\(\alpha_0 < 1\)), where the influence of quantum fluctuations on conductance and charging energy has been experimentally verified.
### Main Problem
Although previous studies have revealed many characteristics of quantum fluctuations, most of them are limited to average quantities. In order to understand the nature of quantum fluctuations, it is necessary to study higher - order correlation functions, especially noise. Therefore, the main purpose of this paper is to construct a theoretical framework covering all regions from Coulomb blockade to sequential tunneling, for arbitrary \(\alpha_0\), and to clarify how quantum fluctuations affect noise characteristics.
### Research Method
The authors use the Schwinger - Keldysh method and the slave - fermion representation to deal with the effective spin - 1/2 operator, so that they can systematically calculate moments of any order, and use the Fermi - Wick theorem to deal with strong - correlation effects. This method allows for a wide consideration of high - order tunneling processes and can derive results consistent with the resonant tunneling approximation (RTA).
### Key Findings
1. **Fano factor suppression at zero temperature**: At zero temperature \(T = 0\) and a finite bias voltage \(|eV|\gg T_K\), the Fano factor is suppressed more than that caused by Coulomb correlations.
2. **Current noise correction at high temperature**: For \(T\gg |eV|/2\gg T_K\), the current noise is corrected under large charge fluctuations and deviates from the predictions of the orthodox theory, but the Fano factor is proportional to the temperature.
3. **Charge noise suppression at low temperature**: For \(eV, T\lesssim T_K\), due to the renormalization of system parameters caused by charge quantum fluctuations, the charge noise is suppressed.
These results indicate that under non - equilibrium conditions, quantum fluctuations have a significant impact on the noise characteristics of single - electron transistors and provide new insights into these phenomena.