Abstract:We present the results of Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and atomic force microscopy (AFM) analysis of sulfur-passivating layers on the GaAs (100) surface. The GaAs surfaces were passivated with both inorganic [(NH4)(2)S-x] and organic [octadecylthiol (ODT)] S-based compounds. We prepared the inorganic sulfur-passivated GaAs(100) surfaces with a wet chemical treatment using (NH4)(2)S solution. This was followed by thermal annealing of the treated sample in an ultrahigh vacuum (UHV). After ex-situ and in-situ treatments, the surface resulted in a (2 x 1) LEED pattern. The LEED data (I-E curves) were recorded and compared with dynamical LEED calculations for different structural models for the sulfur-passivated GaAs (100) surface. The results showed that the sulfur-passivated (2 x 1) surface structure is an arsenic-sulfur dimer on a Ga-terminated substrate. The ex-situ AFM results also revealed a (2 x 1) structure for the inorganic passivation and a very smooth surface for the organic ODT in the ethanol-treated sample. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

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