Abstract:Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

Study on Integrated Ferroelectric Capacitors Applied to FRAM

The Fabriction of Integrated Pb(Zr,Ti)O3 Ferroelectric Capacitor in Ferroelectric Memory

An Innovated Process Of Pt/Pbtio3/Pbzr0.3ti0.7o3/Pbtio3/Pt Integrated Ferroelectric Capacitors For Feram

A Silicon-Based Pt/Pzt/Pt Sandwich Structure For Memory Devices

A Silicon-Based Ferroelectric Capacitor for Memory Devices

Study on Pb(Zr, Ti)O3 capacitors for ferroelectric random access memory

Ferroelectric Properties Of Pt/Pbtio3/Pbzr0.3ti0.7o3/Pbtio3/Pt Integrated Capacitors Etched In Noncrystalline Phase

Ferroelectric-carbon Nanotube Memory Devices.

Fabrication and Properties of MFIS FET for NDRO Ferroelectric Memory Application

High Quality Ferroelectric Capacitor for Feram Applications

Study On Stress Of The Films Applied To Feram

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

An Improved Technology for Fabrication of Integrated Pb(Zr,Ti)O-3 Ferroelectric Capacitor

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Fabrication And Properties Of Pt/Bi3.15nd0.85ti3o12/Hfo2/Si Structure For Ferroelectric Dram (Fedram) Fet

Compositional design of Pb(Zr, Ti)O/sub 3/ for highly reliable ferroelectric memories

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Key Technologies for Feram Backend Module

Effects of electrodes on the properties of sol–gel PZT based capacitors in FeRAM

Fabrication and Characteristics of Au/Cr/Pzt/Pt/Ti/Zro2/Si Structure for Mfmis Fet Application