Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene.

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets

Molecular beam epitaxial growth of topological insulators.

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Nanoplates: Synthesis of 2D Layered BiI3 Nanoplates, BiI3/WSe2van der Waals Heterostructures and Their Electronic, Optoelectronic Properties (Small 38/2017)

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Synthesis of Ultrathin Bi2Se3 Nanosheets/graphene Nanocomposite with Defects/vacancies-Dependent Transient Photocurrent Performance

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

First principles study of semihydrogenated graphene and topological insulator heterojunction