Abstract:Vertically oriented layered $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ nanoplates have been grown by chemical vapor deposition. It is demonstrated that the growth is subject to the species of substrates because the morphologies of nanoplates grown on mica and $\mathrm{Si}{\mathrm{O}}_{2}/\mathrm{Si}$ substrates are quite different. We obtained vertical $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ nanosheets on $\mathrm{Si}{\mathrm{O}}_{2}/\mathrm{Si}$ and sapphire substrates with surface dangling bonds, while we obtained horizontal $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ nanosheets on mica without surface dangling bonds. A continuum model based on surface diffusion and a moving boundary is developed to describe the intermediate states of the steps and the edge. The dangling-bond-assisted heterogeneous nucleation mechanism is proposed to describe the growth of vertical $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ nanoplates: difficult diffusion of $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ adatoms on dangling-bonded substrate surface due to large interface energy between $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ adatoms and $\mathrm{Si}{\mathrm{O}}_{2}/\mathrm{Si}$ (and sapphire) substrates results in $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ seeds growing perpendicularly to the substrate; then vertical nanoplates inherit the growth direction of $\mathrm{I}{\mathrm{n}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ seeds. This work paves the way for the growth of monodisperse vertical two-dimensional nanoplates on $\mathrm{Si}{\mathrm{O}}_{2}/\mathrm{Si}$ substrates, and it expands their utilizations from conventional lateral structured devices to nonplanar vertical electronic and optoelectronic devices.

Nanoplates: Synthesis of 2D Layered BiI3 Nanoplates, BiI3/WSe2van der Waals Heterostructures and Their Electronic, Optoelectronic Properties (Small 38/2017)

A van der Waals pn heterojunction with organic/inorganic semiconductors

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Synthesis of Easily Transferred 2D Layered BiI3 Nanoplates for Flexible Visible-Light Photodetectors

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates.

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Hydrothermal Synthesized Bi2WO6 Nanoplates: Growth Mechanism and Photocatalytic Activities

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Growth Mechanism for Vertically Oriented Layered In2Se3 Nanoplates

Controlled Synthesis of Topological Insulator Nanoplate Arrays on Mica.

From One to Two: In Situ Construction of an Ultrathin 2D-2D Closely Bonded Heterojunction from a Single-Phase Monolayer Nanosheet

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates.

Ambipolar two-dimensional bismuth nanostructures in junction with bismuth oxychloride

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions