Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures

Valentina Gallardo,Barbara Arce,Francisco Muñoz,Rodolfo San Martín,Irina Zubritskaya,Paula Giraldo-Gallo,Hari Manoharan,Carolina Parra

2023-12-16

Abstract:There is great interest in the study of topological insulator-based heterostructures due to expected emerging phenomena. However, a challenge of topological insulator (TI) research is the contribution of the bulk conduction to the TI surface states. Both strain engineering and thickness control routes, which have been proposed to compensate for bulk doping, can be accessed through the use of nano-heterostructures consisting of topological insulator nanostructures grown on 2D materials. In this work, we report the synthesis of TI/graphene nano-heterostructures based on Bi2Te3 and Sb2Te3 nanoplatelets (NPs) grown on single-layer graphene. Various techniques were used to characterize this system in terms of morphology, thickness, composition, and crystal quality. We found that most of the obtained NPs are mainly < 20 [nm] thick with thickness-dependent crystal quality, observed by Raman measurements. Thinner NPs (1 or 2 QL) tend to replicate the topography of the underlying SLG, according to roughness analysis, and observed buckling features. Finally, we show preliminary studies of their band structure obtained by LT-STM (STS) and by DFT. We observe a highly negative doping which can be attributed to the presence of defects.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: how to explore the structural and electronic properties by preparing and characterizing topological insulator (TI)/graphene nano - heterostructures, especially how to overcome the problem of bulk conductivity caused by intrinsic defects in topological insulator materials. Specifically, the research aims to:

1. **Reduce the influence of bulk conductivity**: Through topological insulator nanostructures grown on two - dimensional materials (such as monolayer graphene), using strain engineering and thickness control methods to reduce the contribution of the bulk to the surface state, so as to better study and utilize the surface state of topological insulators.

2. **Optimize the synthesis method**: Synthesize Bi₂Te₃ and Sb₂Te₃ nanosheets using the chemical vapor deposition (CVD) method, and control the thickness and morphology of the nanostructures by adjusting growth parameters (such as temperature, time, gas flow, etc.) to keep them within the range of < 30 nm, which is conducive to the emergence of the surface state and the interaction with the graphene substrate.

3. **Characterize nano - heterostructures**: Characterize these nano - heterostructures in detail through a variety of technical means (such as Raman spectroscopy, scanning electron microscopy (SEM), energy - dispersive X - ray spectroscopy (EDS), atomic force microscopy (AFM), low - temperature scanning tunneling microscopy (LT - STM), etc.) to study their morphology, thickness, composition and crystal quality.

4. **Study the electronic structure**: Combine experimental measurements (such as scanning tunneling spectroscopy (STS)) and theoretical calculations (such as density functional theory (DFT)) to preliminarily study the energy band structure of these nano - heterostructures, especially the position of the Dirac point and its relationship with thickness, as well as the change of local density of electronic states (LDOS).

Through these studies, the author hopes to provide important experimental evidence and theoretical support for the future development of a new generation of electronic devices and technologies based on topological insulators.