A Novel X-Bands RF MEMS Switch with Enhanced Power Handlings

DONG Qiao-hua,LIAO Xiao-ping

DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.157

2006-01-01

Abstract:A MEMS switch for RF applications is presented. A novel three plate structure was used to solve RF self actuation and RF latching without adding any stress. The RF performance was improved by matching the characteristic impedance of the switch. The electromechanical characteristic was simulated by CoventorWare and the pull-in voltage is 26 V. The impedance matching and the RF performance of the switch were simulated by HFSS. When the switch is in‘off’state, the return loss is below -28 dB, and the insert loss is less than 0.25 dB at X-bands. The ‘on’ state switch attains an isolation of more than 28 dB.