Abstract:In this work, Zr-doped CeO2(Ce1-xZrxO2, CZO) films with (001) preferential orientation were fabricated on biaxially textured NiW alloy substrates by using a novel sol-gel method. The precursor solutions were synthe-sized through a newly developed process using common inorganic metal salts of Zr and Ce as the starting materials instead of organic salts. The influence of annealing temperature and the Ce/Zr mole ratio in the precursor solutions on the growth texture of CZO films was investigated. The precursor solutions with the concentration of 0.3 mol/L were coated on the Ni5W substrates using a dip-coating method and then heat-treated at 1050 degrees C for an hour under a reducing atmosphere of high-purity Ar with 5 vol% H-2. The CZO thin films show excellent c-axis preferential orientation when the content of Zr in CZO thin film is less than 40%. The full width of half maximum of the phi scan of (111) reflection and omega scan of (200) reflection of CZO films is as low as the value of about 5 degrees and 6 degrees, respectively. Moreover, it is found that the inside of CZO thin film exhibits quite dense and uniform without cracks and porosity with the aid of the scanning transmission electron microscopy analysis by which the epitaxial growth relationship of (220)(czo )// (200)(NiW )between CZO and NiW is simultaneously confirmed. Finally, highly (001)-oriented YBCO film with good superconducting properties was deposited on CZO buffered NiW substrate. The above results indicate that the CZO film is a quite promising candidate of single buffer layer architecture for YBCO coated conductor.

Transparent ion-conducting ceria-zirconia films made by sol–gel technology

Transparent Conducting CeO2–SiO2 Thin Films

Transparent Two-Phase Composite Oxide Thin Films with High Conductivity

Preparation and Characterization of Ceria-Zirconia Ceramics Using a Sol-Gel Process

Dielectric and Ferroelectric Properties of Ba(Zr0.35Ti0.65)O3 Thin Films Grown by a Sol-Gel Process

Electrochemical, UV–Vis, and microscopical characteristics of sol–gel CeO2:V2O5 thin film

(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

In-situ Low-Temperature Sol-Gel Growth of Nano-Cerium Oxide Ternary Composite Films for Ultraviolet Blocking

PREPARATION AND DIELECTRIC PROPERTIES OF Ba(ZrxTi1−x)O3 THIN FILMS GROWN BY A SOL-GEL PROCESS

Electrical Properties of Nanocrystalline CeO 2 –Y 2 O 3 Thin Films Prepared by the Sol-Gel Method

Electrochromic Ultra-Thin Films Based On Cerium Polyoxometalate

Investigation Of Zro2(Ce4+) Thin Film For Oxygen Sensor

Dielectric and Ferroelectric Properties of Highly Oriented (Pb,nb)(zr,sn,ti)o-3 Thin Films Grown by A Sol-Gel Process

Electrical Properties of ZrO 2 -Ceo 2 at Intermediate Temperatures

Ambient temperature sol-gel synthesis of CeO2-SiO2 and TiO2-CeO2-SiO2 films with high efficiency of UV absorption and without destructive oxidation on heat sensitive organic substrate

Synthesis of ZnO:Al Transparent Conductive Thin Films Using Sol-gel Method

Measurement and Characterization of CeO2-TiO2 Ion Storage Films for Electrochromic Devices

Electrochromic Properties of Sol-Gel Deposited V2o5 and Tio2-V2o5 Binary Thin Films

Preparation and Electrochromic Properties of TiO2 Films Doped Ce and Sm

WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESS

Highly (001)-oriented zirconium-doped ceria films grown on biaxially textured nickel tungsten substrates through an inorganic-salts-based chemical solution deposition route