Abstract:Although 4Ce4YSZ has high corrosion resistance, it faces challenges concerning its sinterability and ionic conductivity. Therefore, we studied destabilization behavior caused by corrosion and oxygen vacancy ordering according to ZnO doping. Powders of (4Ce4YSZ)1−x(ZnO)x (x = 0.5, 1, 2, 4 mol%) were synthesized using the sol-gel method. With the addition of ZnO, the cubic phase increased, and secondary phases were not observed. The (111) peak showed a higher angle shift in ZnO-doped 4Ce4YSZ compared to 4Ce4YSZ, and TEM-SAED revealed a reduction in the spacing of the (011)t plane, suggesting lattice contraction due to the substitution of the smaller Zn2+ (60 Å) for Zr4+ (84 Å) in the lattice. The local atomic structure analysis was conducted using EXAFS to investigate the oxygen vacancy ordering behavior. Zr K-edge Fourier transform data revealed a decrease in the Zr-O1 peak intensity with an increasing amount of ZnO doping, indicating an increase in oxygen vacancies. The Zr-O1 peak position shifted to the right, leading to an increase in the Zr-O1 interatomic distance. In the Y K-edge Fourier transform data, the Y-O1 peak intensity did not decrease, and there was little variation in the Y-O1 interatomic distance. These results suggest that the oxygen vacancies formed due to ZnO doping are located in the neighboring oxygen shell of Zn, rather than in the neighboring oxygen shells of Y and Zr. Impedance measurements were conducted to measure the conductivity, and as the amount of ZnO doping increased, the total conductivity increased, while the activation energy decreased. The increase in oxygen vacancies by ZnO doping contributed to the enhancement of conductivity, and it is considered that these created oxygen vacancies did not interact with Zn2+ and did not form defect associations. Fluoride-based molten salts were introduced to the specimens to assess the corrosion behavior in a molten salt environment. Yttrium depletion layers (YDLs) were formed on the surfaces of all specimens due to the leaching of yttrium. However, Ce remained relatively stable at the interface according to EDS line scans, suggesting a reduction in the phase transformation (cubic, tetragonal to monoclinic) typically associated with yttrium leaching in YSZ.

Investigation Of Zro2(Ce4+) Thin Film For Oxygen Sensor

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Effects of CeO2 Doping on Gas Sensing Properties of ZnO Thin Films

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Preparation and Thermochromic Properties of Sol-Gel-derived Zr-doped VO 2 Films

Electronic Conductivity of ZrO[sub 2]–CeO[sub 2]–YO[sub 1.5] Solid Solutions in a Wide Range of Temperature and Oxygen Partial Pressure

Effect of ZrO2 dopant on the electrical and gas sensing properties of SnO2 thin films prepared by the sol-gel technique

Preparation and Characterization of Ceria-Zirconia Ceramics Using a Sol-Gel Process

RF Sputtered CeO2 Thin Films-Based Oxygen Sensors

Transparent ion-conducting ceria-zirconia films made by sol–gel technology

Electronic Conductivity Of Zro2-Ceo2-Yo1.5 Solid Solutions In A Wide Range Of Temperature And Oxygen Partial Pressure

Preparation and Analysis of Zirconia Oxygen Sensors

Oxygen Vacancy Ordering and Molten Salt Corrosion Behavior of ZnO-Doped CeYSZ for Solid Oxide Membranes

Electrical Properties of ZrO 2 -Ceo 2 at Intermediate Temperatures

Preparation and Humidity Sensitivity of Multi-Layered Zirconia Thin Films by Sol–Gel Method

Ce3+ concentration in ZrO2–CeO2–Y2O3 system studied by electronic Raman scattering

Effect of Yttrium Doping on Oxygen Storage Capacity of Ce_(0.33)Zr_(0.67)O_2

The Role of Ce Doping in Enhancing Sensing Performance of ZnO-based Gas Sensor by Adjusting the Proportion of Oxygen Species

Morphology, photoluminescence and gas sensing of Ce-doped ZnO microspheres

Microstructure, phase composition, and gas-sensing properties of nanostructured ZrO2-xY2O3 thin films and powders obtained by the sol-gel method