RF Sputtered CeO2 Thin Films-Based Oxygen Sensors

N. Ramshanker,K. L. Ganapathi,M. S. Bhat,S. Mohan
DOI: https://doi.org/10.1109/JSEN.2019.2931766
IF: 4.3
2019-11-15
IEEE Sensors Journal
Abstract:In this paper, we report the scalable, high sensitivity, fast response, and low operating temperature Cerium oxide (CeO2) thin film-based oxygen sensors by optimizing CeO2 film thickness. CeO2 thin films of thickness ranging from 90 to 340 nm have been deposited at 400°C using radio frequency (RF) magnetron sputtering on Al2O3 substrates. Ellipsometry, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize the CeO2 films for their thickness, structural, compositional/chemical, and surface morphology properties. Gas sensors have been fabricated using CeO2 film as a sensing material and tested in an oxygen gas environment. CeO2 film with an optimum thickness of 260 nm has shown high sensitivity (12.6) and fast response time (≤10 s) along with fast recovery time (15 s) at a low operating temperature of 400°C. To the best of our knowledge, these are the best values reported till date for undoped CeO2 thin film-based oxygen sensors. Furthermore, from the sensor’s response, it was observed that there was no drifting from the baseline. This superior performance of CeO2 thin film-based oxygen sensor may be attributed to the combination of three factors, i.e., 1) high surface energy and reactivity due to the presence of (200) oriented CeO2 plane; 2) low resistance due to better crystallinity; and 3) perfect stoichiometry with required roughness.
Engineering,Materials Science
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