Probing PrxCe1-xO2-d Thin Film Defect Concentrations Using in Situ Optical Absorption and Impedance Spectroscopy Techniques

Sean R. Bishop,Di Chen,Jae Jin Kim,Nicholas Thompson,Harry L. Tuller
DOI: https://doi.org/10.1149/ma2012-02/16/1881
2012-01-01
ECS Meeting Abstracts
Abstract:Thin film electroceramics are of great interest in gas sensors and solid oxide fuel cells (SOFCs), where, the small dimensions lead to more rapid response times in gas detection and low ionic resistance in SOFC electrodes and membranes [1]. The nature and concentrations of point defects play a key role in determining device electrical properties, and hence, performance. As a consequence of the larger surface and interface to volume ratios and the potential for stress/strain from film/substrate lattice mismatch, thin films often exhibit electrical behavior largely different from their bulk counterparts, frequently attributed to differences in defect structure of the films. To test this hypothesis, two complementary methods, optical absorption and chemical capacitance, are used to examine defect concentrations in PrxCe1-xO2-δ (PCO) thin films. At relatively high oxygen partial pressures (e.g., air, T > 500 C), Pr is multivalent (4+/3+), resulting in mixed ionic electronic conductivity with localized electrons conducting through a Pr impurity band. Interestingly, the impurity band, when partially filled, results in visible light absorption at ~2.5 eV from excitation of ceria valence band electrons to the Pr impurity band (figure 1) [2,3]. With further reduction, the impurity band becomes full and the material transparent. This change in optical absorption presents a unique opportunity to study the oxygen stoichiometry in PCO thin films as shown in figure 2 by examining variations in light transmission during changes in pO2, from reducing to oxidizing conditions.
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