Effect of thickness and annealing on electrical characteristics of cerium oxide-doped vanadium oxide (CeO2:V2O5) thin film for sensor application

T. R. Kishan Chand,H. M. Kalpana,T. N. Satish
DOI: https://doi.org/10.1007/s10854-024-12388-9
2024-03-22
Journal of Materials Science Materials in Electronics
Abstract:The synthesized 10 wt% cerium oxide-doped vanadium pentoxide nano-particles are deposited in the form of thin films on a glass substrate by e-beam evaporation to study their best appropriate thickness and annealing temperature ranges. The structural, morphological, and electrical characteristics of these films are examined for their suitability toward the development of thin film strain gauges. The nano-structured crystallite grain size of 0.1537 Å in an orthorhombic layered cubic structure was recognized through its structural analysis. Uniformly distributed morphology of the deposited films is visible through the SEM images. The small variation in RMS surface roughness between 1.346 and 1.354 nm highlights the stabilized film formation on the surface of the substrate. It was noticed through its electrical properties that, with the increase in thickness of the film from 80 to 250 nm, the resistance was found to decrease from 2.5 MΩ to 27.52 KΩ and up to 25.83 KΩ with the subsequent raise in annealing temperature till 500 °C. There was also an observed lowest dip in resistance of 12.13 KΩ, at the annealing temperature of 300 °C and the thickness range of 220 nm.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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