Abstract:In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping (HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, and reproducibility. Employing HP-GIELD, we achieved nitrogen concentrations exceeding 6 at% (3.01 × 10 21 at/cm 3 ) in intrinsic silicon. Notably, nitrogen concentration remained above the liquid solubility limit to ~1 μm in depth. HP-GIELD's high-pressure environment effectively suppressed physical surface damage and the generation of silicon dangling bonds, while the well-known effects of pulsed laser annealing (PLA) preserved crystallinity. Additionally, we conducted a theoretical analysis of light-matter interactions and thermal effects governing nitrogen diffusion during HP-GIELD, which provided insights into the doping mechanism. Leveraging excimer lasers, our method is well-suited for integration into high-volume semiconductor manufacturing, particularly front-end-of-line processes.

Formation of the Buried Insulating Sixny Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Improved PECVD SixNy film as a mask layer for deep wet etching of the silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Defects in nitrogen-doped multicrystalline silicon

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments