Abstract:Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC

Ion implantation associated defects in Si(100) and their annealing behavior studied by slow positron beams

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Optical Spectroscopy Study of Damage Evolution in 6H-Sic by H2+ Implantation

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Research on the Surface Damage of Si+ and H+ Co-Implanted 6H-Sic Before and after Annealing

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Implantation temperature and thermal annealing behavior in H 2 + -implanted 6H-SiC

Spectra Study of He-Irradiation Induced Defects in 6H-Sic

Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline α-SiC

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature

Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures

The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy