Oxide Interfaces Under the Electron Microscope

M Varela,HM Christen,HN Lee,L Petit,T Schulthess,SJ Pennycook,W Luo,ST Pantelides,J Garcia-Barriocanal,C Leon,J Santamaria

DOI: https://doi.org/10.1017/S1431927608086194

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

What problem does this paper attempt to address?

In-situ Fabrication, Manipulation and Property Measurements of Single Nanotubes and Nanowires with Near Atomic Resolution

L-M Peng,Q Chen,JY Wang,MS Wang,ZY Zhang,CH Jin,XL Wei

DOI: https://doi.org/10.1017/s1431927606069510

IF: 4.0991

2006-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
In Situ Electron Microscopy Characterization of Optoelectronic Nanostructures and Nanodevices

M Gao,C Li,W Li,Z Liu,L-M Peng

DOI: https://doi.org/10.1017/s1431927610059842

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Untangling Coupled Order Parameters at Complex Oxide Interfaces with Aberration-Corrected STEM and EELS

A.Y. Borisevich,Y. Kim,M.P. Oxley,S.J. Pennycook,S.V. Kalinin,A. Morozovska,E. Eliseev,Y. Chu,P. Yu

DOI: https://doi.org/10.1017/s1431927612003443

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Application of Monochromated Electrons in EELS

W Sigle,L Gu,C Koch,V Srot,J Nelayah,PA Van Aken

DOI: https://doi.org/10.1017/s1431927608084420

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Electron Microscopy of Nanodevices: in Situ and Ex Situ Characterization of Structure and Transport Properties of Carbon Nanotubes

JM Zuo,T Kim,Q Chen,LM Peng,EA Olson

DOI: https://doi.org/10.1017/s1431927608082445

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Applications of Aberration-corrected TEM and STEM in Complex Oxides and Nanostructured Materials

S Lazar,L-Y Chang,L Gunawan,Y Shao,GA Botton

DOI: https://doi.org/10.1017/S1431927609098663

IF: 4.0991

2009-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
High-Spatial and High-Energy Resolution EELS Studies of Chemical and Electronic Properties of Interfaces and Nanostructures

K Dudeck,M Couillard,N Gauquelin,L Gunawan,S Hosseini Vajargah,S Lazar,D Rossouw,Y Shao,G Zhu,G Botton

DOI: https://doi.org/10.1017/s1431927611004843

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Ultrastructure of a Metal/Superconductor Interface Revealed by Atomic-Resolution STEM Techniques

Y Xin,LF Allard,ZQ Mao

DOI: https://doi.org/10.1017/s1431927608087126

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Interface Structure-Property Relations Through Aberration-Corrected STEM

SJ Pennycook,AY Borisevich,M Varela,AR Lupini,HJ Chang,DN Leonard,TJ Pennycook,MP Oxley,JC Idrobo,H Yurdakul,S Turan,P Yu,R Ramesh,ST Pantelides

DOI: https://doi.org/10.1017/s1431927610059787

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
The Challenge of Imaging Hard/soft Matter Interfaces at Atomic Resolution

B. Barton,R. Buonsanti,A. Dong,D. Milliron,C.F. Kisielowski,L.P. Hansen,S. Helveg,B. Jiang

DOI: https://doi.org/10.1017/s1431927612009889

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

J He,JC Jiang,EI Meletis,Z Yuan,J Liu,J Weaver,CL Chen,B Lin,V Giurgiutiu,RY Guo,A Bhalla

DOI: https://doi.org/10.1017/s143192760808745x

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Plan-view TEM Study on Interfacial Structure of (la, Ca)MnO3/MgO

JC Jiang,J He,EI Meletis,Z Yuan,CL Chen

DOI: https://doi.org/10.1017/s1431927608087588

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Determination of Atomic Structures of Crystal Defects, Interfaces and Surfaces Via Aberration-Corrected Transmission Electron Microscopy

J Zhu,R Yu,ZY Cheng,T Ling,N Lu,L Xie,ZD Cheng,HH Zhou,XY Zhong

DOI: https://doi.org/10.1017/s1431927610059131

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Practical Aspects of Atomic-Scale In Situ Investigation of Electrochemistry in All-Solid Lithium-Ion Batteries

Bin Liu,Young-Min Kim,Raymond R. Unocic,Chengdu Liang,Nancy J. Dudney,Miaofang Chi,Z. Shan,Shirley Meng

DOI: https://doi.org/10.1017/s1431927612008872

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
(Invited) Engineering Electronic and Electrochemical Nanoscale Oxides

Harry L. Tuller,Jae Jin Kim,Sean R. Bishop,Di Chen

DOI: https://doi.org/10.1149/ma2016-02/39/2892

2016-01-01

Abstract:Oxides are playing an increasing critical role as functional components in the fields of energy conversion/storage, microelectronics, displays, sensors/actuators and catalysis. In turn, their electrical (ionic & electronic), optical, magnetic and catalytic properties depend sensitively on their defect structure and oxygen nonstoichiometry, typically frozen in during processing, and rarely well defined. This is particularly true for thin films and nanoparticles/wires, where conventional methods, appropriate to bulk materials, do not apply. In this presentation, we review in-situ optical, electrochemical and dilatometric methods, developed or refined in our laboratory, to monitor, analyze and control nonstoichiometry, defect equilbria, transport and optical properties of oxide thin films and nano-sized particles. Examples will include materials of interest as electrodes in fuel cells, and as components of chemical sensors, oxidation catalysts and electronic memory devices.
Ultrathin Free-Standing Oxide Membranes for Electron and Photon Spectroscopy Studies of Solid–Gas and Solid–Liquid Interfaces

Yi-Hsien Lu,Carlos Morales,Xiao Zhao,Matthijs A. van Spronsen,Artem Baskin,David Prendergast,Peidong Yang,Hans A. Bechtel,Edward S. Barnard,D. Frank Ogletree,Virginia Altoe,Leonardo Soriano,Adam M. Schwartzberg,Miquel Salmeron

DOI: https://doi.org/10.1021/acs.nanolett.0c01801

IF: 10.8

2020-08-05

Nano Letters

Abstract:Free-standing ultrathin (∼2 nm) films of several oxides (Al2O3,TiO2, and others) have been developed, which are mechanically robust and transparent to electrons with Ekin ≥ 200 eV and to photons. We demonstrate their applicability in environmental X-ray photoelectron and infrared spectroscopy for molecular level studies of solid–gas (≥1 bar) and solid–liquid interfaces. These films act as membranes closing a reaction cell and as substrates and electrodes for electrochemical reactions. The remarkable properties of such ultrathin oxides membranes enable atomic/molecular level studies of interfacial phenomena, such as corrosion, catalysis, electrochemical reactions, energy storage, geochemistry, and biology, in a broad range of environmental conditions.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c01801?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c01801</a>.PE-ALD growth of metal-oxides, graphene and polymer transfer on perforated SiN membranes, thickness estimation of free-standing metal-oxides by EELS, TEM/EELS characterization of free-standing Al2O3 windows, and XPS depth profile analysis of Al2O3 thin film (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c01801/suppl_file/nl0c01801_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Direct Atomic Imaging of Oxide Surfaces

R. Yu,W. Zhan,M. He,S. Lu,J. Zhu

DOI: https://doi.org/10.1107/s2053273314083855

2014-01-01

Abstract:Surfaces of metal oxides are of crucial importance for a variety of technological applications such as heterogeneous catalysis, thin film growth, gas sensing, and corrosion prevention [1]. Due to the complexities of oxides in crystal structure and electronic structure, however, the surface science of oxides lags far behind that of metals or semiconductors. Conventional surface-science techniques, typically scanning tunneling microscopy (STM) and low energy electron diffraction (LEED), are usually limited to surfaces of single crystals with relatively simple structures. Metal oxides are usually good insulators, either band insulators or Mott insulators, making them not suitable for STM, LEED, and most of spectroscopic methods using low energy electrons as probes. On the other hand, the complex atomic structures of oxides results in too many structural parameters to be determined by spectroscopy or diffraction methods. Recent developments in high-resolution transmission electron microscopy (TEM) provide us opportunities to overcome the above difficulties. With the realization of aberration-correction, the point resolution of TEM has been improved into the milestone 1 Angstrom scale. In addition, the correction of the spherical aberration has almost eliminated the contrast delocalization in high-resolution images. Therefore, high resolution TEM becomes an even more powerful tool than before for materials research at a truly atomic-scale. Here, we will present our recent works on atomic and electronic structure of oxide surfaces [2-3]. We will show that the structure and dynamics of oxide surfaces can be directly imaged and measured at the sub-angstrom scale with an accuracy of picometers, comparable to that obtained by conventional surface science techniques on single crystals.
In situ and ex situ approaches for molecular scale understanding of electrochemical interfaces

Yasuyuki Yokota

DOI: https://doi.org/10.35848/1347-4065/ad455d

IF: 1.5

2024-04-30

Japanese Journal of Applied Physics

Abstract:Abstract Microscopic studies on electrolyte solution / electrode interfaces provide the most fundamental information not only for understanding the electric double layer formed at the interfaces but also for designing sophisticated electrochemical (EC) devices. In this study, we developed tip-enhanced Raman spectroscopy (TERS), which is based on an electrochemical scanning tunneling microscope (EC-STM), and demonstrated electrochemical TERS (EC-TERS) measurements of benzenethiol monolayers on Au(111). A specially-designed cell enables us to carry out reproducible EC, EC-STM, and EC-TERS measurements, which indicates consistent results among these techniques for the oxidative desorption of the benzenethiol monolayers.

physics, applied
Visualising emergent phenomena at oxide interfaces

Michael Oberaigner,Manuel Ederer,Sandeep Kumar Chaluvadi,Pasquale Orgiani,Regina Ciancio,Stefan Löffler,Gerald Kothleitner,Daniel Knez

2023-10-06

Abstract:Knowledge of atomic-level details of structure, chemistry, and electronic states is paramount for a comprehensive understanding of emergent properties at oxide interfaces. We utilise a novel methodology based on atomic-scale electron energy loss spectroscopy (EELS) to spatially map the electronic states tied to the formation of a two-dimensional electron gas (2DEG) at the prototypical non-polar/polar $TiO_2$/$LaAlO_3$ interface. Combined with differential phase contrast analysis we directly visualise the microscopic locations of ions and charge and find that 2DEG states and $Ti^{3+}$ defect states exhibit different spatial distributions. Supported by density functional theory (DFT) and inelastic scattering simulations we examine the role of oxygen vacancies in 2DEG formation. Our work presents a general pathway to directly image emergent phenomena at interfaces using this unique combination of arising microscopy techniques with machine learning assisted data analysis procedures.

Materials Science
Scanning Transmission Electron Microscopy of Oxide Interfaces and Heterostructures

Steven R. Spurgeon

DOI: https://doi.org/10.48550/arXiv.2001.00947

2020-01-11

Abstract:Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications. While precision synthesis techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD), provide a high degree of control over these systems, there remains a disconnect between ideal and realized materials. Because thin films adopt structures and chemistries distinct from their bulk counterparts, it is often difficult to predict what properties will emerge. The complex energy landscape of the synthesis process is also strongly influenced by non-equilibrium growth conditions imposed by the substrate, as well as the kinetics of thin film crystallization and fluctuations in process variables, all of which can lead to significant deviations from targeted outcomes. High-resolution structural and chemical characterization techniques, as described in this volume, are needed to verify growth models, bound theoretical calculations, and guide materials design. While many characterization options exist, most are spatially-averaged or indirect, providing only partial insight into the complex behavior of these systems. Over the past several decades, scanning transmission electron microscopy (STEM) has become a cornerstone of oxide heterostructure characterization owing to its ability to simultaneously resolve structure, chemistry, and defects at the highest spatial resolution. STEM methods are an essential complement to averaged scattering techniques, offering a direct picture of resulting materials that can inform and refine the growth process to achieve targeted properties. There is arguably no other technique that can provide such a broad array of information at the atomic-scale, all within a single experimental session.

Materials Science,Instrumentation and Detectors

Oxide Interfaces Under the Electron Microscope

In-situ Fabrication, Manipulation and Property Measurements of Single Nanotubes and Nanowires with Near Atomic Resolution

In Situ Electron Microscopy Characterization of Optoelectronic Nanostructures and Nanodevices

Untangling Coupled Order Parameters at Complex Oxide Interfaces with Aberration-Corrected STEM and EELS

Application of Monochromated Electrons in EELS

Electron Microscopy of Nanodevices: in Situ and Ex Situ Characterization of Structure and Transport Properties of Carbon Nanotubes

Applications of Aberration-corrected TEM and STEM in Complex Oxides and Nanostructured Materials

High-Spatial and High-Energy Resolution EELS Studies of Chemical and Electronic Properties of Interfaces and Nanostructures

Ultrastructure of a Metal/Superconductor Interface Revealed by Atomic-Resolution STEM Techniques

Interface Structure-Property Relations Through Aberration-Corrected STEM

The Challenge of Imaging Hard/soft Matter Interfaces at Atomic Resolution

Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

Plan-view TEM Study on Interfacial Structure of (la, Ca)MnO3/MgO

Determination of Atomic Structures of Crystal Defects, Interfaces and Surfaces Via Aberration-Corrected Transmission Electron Microscopy

Practical Aspects of Atomic-Scale In Situ Investigation of Electrochemistry in All-Solid Lithium-Ion Batteries

(Invited) Engineering Electronic and Electrochemical Nanoscale Oxides

Ultrathin Free-Standing Oxide Membranes for Electron and Photon Spectroscopy Studies of Solid–Gas and Solid–Liquid Interfaces

Direct Atomic Imaging of Oxide Surfaces

In situ and ex situ approaches for molecular scale understanding of electrochemical interfaces

Visualising emergent phenomena at oxide interfaces

Scanning Transmission Electron Microscopy of Oxide Interfaces and Heterostructures