Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

J He,JC Jiang,EI Meletis,Z Yuan,J Liu,J Weaver,CL Chen,B Lin,V Giurgiutiu,RY Guo,A Bhalla

DOI: https://doi.org/10.1017/s143192760808745x

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

What problem does this paper attempt to address?

Ferroelectric Batio3 Thin Films on Ti Substrate Fabricated Using Pulsed-Laser Deposition

J. He,J. C. Jiang,J. Liu,G. Collins,C. L. Chen,B. Lin,V. Giurgiutiu,R. Y. Guo,A. Bhalla,E. I. Meletis

DOI: https://doi.org/10.1166/jnn.2010.2567

2010-01-01

Journal of Nanoscience and Nanotechnology

Abstract:We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.
In Situ TEM Studies of Ferroelectric Thin Films

P Gao,C Nelson,J Jokisaari,S Baek,C Eom,E Wang,X Pan

DOI: https://doi.org/10.1017/s1431927611007689

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

J Jokisaari,C Nelson,S Kim,P Gao,S Baek,C Eom,X Pan

DOI: https://doi.org/10.1017/s1431927611008117

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Direct Observation of Thickness Dependence of Ferroelectricity in Freestanding BaTiO3 Thin Film

yueliang li,rong yu,huihua zhou,zhiying cheng,xiaohui wang,longtu li,jing zhu

DOI: https://doi.org/10.1111/jace.13749

IF: 4.186

2015-01-01

Journal of the American Ceramic Society

Abstract:In this work, we focus on the thickness dependence of the electric polarization in a freestanding BaTiO3 thin film. The locations of titanium and oxygen ions as well as their relative displacements were directly observed and measured by using aberration-corrected transmission electron microscopy (AC-TEM). It is found that the freestanding BaTiO3 thin film keeps the tetragonal distortion when its thickness is thicker than 4.8nm, while completely loses its ferroelectricity when thinner than 4.4nm. The method of combining high-resolution AC-TEM imaging with the multiparameter simulation unit cell by unit cell was developed to accurately determine each local thickness of the sample. This method is powerful for quantitative analysis in AC-TEM images.
Interface Structures and Epitaxial Behavior of Ferroelectric (ba,sr)tio3 Thin Films

CL Chen,T Garrett,Y Lin,JC Jiang,EI Meletis,FA Miranda,Z Zhang,WK Chu

DOI: https://doi.org/10.1080/10584580210843

2002-01-01

Integrated Ferroelectrics

Abstract:Perovskite Ba 0.6 Sr 0.4 TiO 3 thin films were epitaxially grown on (001) LaAlO 3 and (001) MgO by using pulsed laser ablation. The films are single crystal cubic structure with interface relationship of (001) BST // (001) MgO and <100> BST // <100> MgO for the films on (001) MgO and (001) BST // (001) LAO and <100> BST // <100> LAO . High-resolution transmission electron microscopy studies indicated that the initially grown layer of the film on both (001) MgO and (001) LAO is TiO 2 monolayer. Equally spaced misfit dislocations were found to form at the interface to release the lattice mismatch energy. Physical property measurements show that the films exhibit excellent room temperature dielectric behavior with very low dielectric loss of 0.007 and very large tenability of 45% at 1 MHz. The figure of merit of 60°/dB has been achieved for the microwave phase shifter operated at 24 GHz and room temperature.
Preparation of Nano-Structured BaTiO3 Thin Film by Electrophoretic Deposition and Its Characterization

YJ Wu,J Li,H Tanaka,M Kuwabara

DOI: https://doi.org/10.1016/j.jeurceramsoc.2005.03.008

IF: 5.7

2005-01-01

Journal of the European Ceramic Society

Abstract:Nano-structured BaTiO3 (BTO) thin films were electrophoretically deposited from BTO nanoparticle suspensions. The microstructural properties of the nanoparticles and thin films were examined through XRD, HR-TEM, and SEM techniques. BTO nanocrystallites in a pseudo-cubic perovskite phase with an average particle size of about 10nm were synthesized by a high-concentration sol–gel process. By dispersing a piece of BTO bulk gel into a mixed solvent of 2-methoxyethonal and acetylacetone, the well-dispersed and stable suspensions of BTO nanocrystallites were obtained. From these suspensions, crack-free nano-structured BTO thin films with different thickness from 100nm to several micrometers were deposited on Pt/Ti/SiO2/Si substrates by electrophoretic deposition (EPD). The prepared films exhibited a uniform nanostructure, and a smooth surface with a roughness under 10nm. The microstructural and dielectric properties of sintered BTO thin films were evaluated.
Microstructures and Surface Step-Induced Antiphase Boundaries in Epitaxial Ferroelectric Ba0.6sr0.4tio3 Thin Film on Mgo

JC Jiang,Y Lin,CL Chen,CW Chu,EI Meletis

DOI: https://doi.org/10.1063/1.1446221

IF: 2.877

2002-01-01

Journal of Applied Physics

Abstract:Ba 0.6 Sr 0.4 TiO 3 thin films were epitaxially grown on (001) MgO substrates using pulsed laser ablation. Cross-sectional and plan-view transmission electron microscopy have been employed to study the microstructures and the interface behavior of the as-grown thin films. The 110-nm-thick Ba0.6Sr0.4TiO3 thin films have a flat surface and sharp interface. The entire thin film has a single-crystal cubic structure with an interface relationship of (001)Ba0.6Sr0.4TiO3//(001)MgO and 〈100〉Ba0.6Sr0.4TiO3//〈100〉MgO with respect to the substrate. The 6.4% lattice mismatch between Ba0.6Sr0.4TiO3 and MgO was completely released at the interface by forming equally spaced misfit dislocations with a distance of ∼3.2 nm. High-resolution transmission electron microscopy investigation shows that the initial grown layer of the film is the TiO2 monolayer. The growth models of “substrate surface-terrace induced defects” for perovskite on a rock-salt system have been developed to understand the as-grown features where the conservative and nonconservative antiphase boundaries can be formed.
Microstructure Analysis of Ferroelectric Batio3/Srtio3 Heterostructures on Laalo3 Substrates by High Resolution X-Ray Diffraction

C. Dai,M. Liu,C. R. Ma,C. L. Chen,Y. Lin

DOI: https://doi.org/10.1080/00150193.2014.922836

2014-01-01

Ferroelectrics

Abstract:High-resolution x-ray diffraction has been used to analyze the strain distribution and dislocation densities in epitaxial BaTiO3/SrTiO3 heterostructures. It is found that the initial layer in the heterostructures is important to the epitaxial quality and significantly affects the strain distribution, dislocation density, and the lateral coherence length in the heterostructural thin films.
Interface Effects on Static and Dynamic Properties of Multiferroic BiFeO3

C.T. Nelson,P. Gao,J.R. Jokisaari,X. Pan,C. Heikes,C. Adamo,A. Melville,D.G. Schlom,S. Baek,C.M. Folkman,C. Eom,B. Winchester,Y. Gu,L. Chen,Y. Liu,J. Li

DOI: https://doi.org/10.1017/s1431927612003455

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS

YANG PING-XIONG, DENG HONG-MEI, ZHENG LI-RONG, LIN CHENG-LU

DOI: https://doi.org/10.7498/aps.46.1449

1997-01-01

Abstract:High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700℃ in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer.Good ferroelectric properties were obtained from the thin films;the remnant polarization and coercive field were about 10μC/cm2 and 57kV/cm, respectively. No fatigue was observed at up to 1010 switching cycles.Leakage current and the dc breakdown field measurement were about 4×10-8A/cm2 at 5V and 250kV/cm,respectively.
Fabrication, physical property and microstructural characterization of ferroelectric BaTiO3 nanofilms

Xin-hua ZHU,Jian-min ZHU,Zhi-guo LIU,Nai-ben MING

DOI: https://doi.org/10.3969/j.issn.1000-6281.2009.02.017

2009-01-01

Abstract:By pulsed laser deposition (PLD) method ferroelectric BaTiO3 nanofilms were grown on Si substrates coated by nanoporous alumina membranes (NAMs) with an average pore size of 20 nm,and metal Pt nanowires were embedded in NAMs as a part of the bottom electrode. The dielectric and ferroelectric properties,and microstructure of the BaTiO3 nanofilms were characterized. The results showed that the dielectric constant of the BaTiO3 nanofilms with a thickness of 170 nm,decreased slowly from 400 to 350 as the measured frequency was increased from 103 Hz to 106 Hz,and that the dielectric loss increased slowly from 0.029 to 0.036 in the low frequency range from 103 Hz to 105 Hz,whereas quickly increased up to 0.07 at high frequencies over 105 Hz. Such a phenomenon was resulted from the dielectric dipolar polarization in the BaTiO3 nanofilms. Polarization-electric field hysteresis loop indicated that the remanent polarization and the coercive field of the BaTiO3 nanofilms were 17 μC/cm2 and 175 kV/cm,respectively. Cross-sectional (scanning) transmission electron microscopy (TEM) images demonstrated that the BaTiO3 nanofilms contacted directly with the Pt nanowires,and the interface between them had some degree of waviness. Both selected area electron diffraction and high-resolution TEM images confirmed that the BaTiO3 nanofilms were the tetragonal phase with a perovskite structure. After post-annealing and crystallization of the BaTiO3 nanofilms,some Pt nanowires became branches at their ends due to the re-growth of the Pt nanowires. A suitable post-annealing temperature is the critical processing parameter of fabricating ferroelectric ordered nanostructures as considering a trade-off between the ordered metal nanowires within NAMs and the crystallinity of ferroelectric nanofilms.
Integration Of Ferroelectric Batio3 Thin Films Directly On Ni And Ti Metallic Tapes For Structural Health Monitoring Systems And Energy Harvest Applications

J. WEAVER,Z. YUAN,J. LIU,G. COLLINS,C. L. CHEN,J. C. JIANG,J. HE,E. I. MELETIS,R. Y. GUO,A. BHALLA,B. LIN,V. GIURGIUTIU,M. W. COLE

DOI: https://doi.org/10.1080/10584580802540355

2008-01-01

Integrated Ferroelectrics

Abstract:Ferroelectric BaTiO3 thin films were fabricated directly on various metallic substrate materials such as Ni and Ti by using the pulsed laser for the development of structural health monitoring systems and energy harvest applications. Microstructure studies from x-ray diffraction and electron microscopy indicate that the as-grown BaTiO3 thin films have pure BaTiO3 crystal phase. The TEM studies indicate that the BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm and can be directly integrated on the Ni tapes without the formation of NiO interlayer suggesting that this system can be developed for super-capacitor devices. The BaTiO3films have good interface structures and strong adhesion with respect to Ni and Ti substrates. Dielectric measurements have shown the hysteresis loop at room temperature in the film with a large remanent polarization, indicating that the ferroelectric domains have been created in the as-deposited BTO films. The successful integration of ferroelectric thin films directly on metallic materials has promised for the development of the structural health monitoring systems and energy harvest devices.
Ferroelectric state and polarization switching behaviour of ultrafine BaTiO 3 nanoparticles with large-scale size uniformity

Yanan Hao,Zunpeng Feng,Soham Banerjee,Xiaohui Wang,Simon J. L. Billinge,Jiesu Wang,Kuijuan Jin,Ke Bi,Longtu Li

DOI: https://doi.org/10.1039/d0tc05975g

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:A coherently non-centrosymmetric structure and remarkable macroscopic ferroelectric response of 4.5 nm BTO nanocrystals are reported.

materials science, multidisciplinary,physics, applied
In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

C Nelson,P Gao,J Jokisaari,B Winchester,Y Gu,C Heikes,A Melville,C Adamo,S Baek,C Folkman,C Eom,D Schlom,L Chen,X Pan

DOI: https://doi.org/10.1017/s1431927611007677

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Microstructure and Ferroelectric Properties of Bi3titao9 Thin Films by Metalorganic Decomposition Method

D Xie,ZG Zhang,TL Ren,LT Liu

DOI: https://doi.org/10.1080/10584580600659886

2006-01-01

Integrated Ferroelectrics

Abstract:Bismuth titanium tantalum-Bi3TiTaO9 (BTT) thin films with different thickness from 100 nm to 400 nm were successfully fabricated on Pt/Ti/SiO2/Si(100) substrates using modified metalorganic decomposition (MOD) technique at different annealing temperatures. The microstructure of BTT thin films was affected by the film thickness and process temperature. Definite c-axis orientation growth of BTT thin films was found for Pt/Ti/SiO2/Si(100) substrate. The c-orientation ratio and grain size increased with the increase of post annealing temperature. The grain size in BTT thin films annealed at 750 degrees C and 800 degrees C was about 90 greater than or similar to 100 nm and 150 greater than or similar to 180 nm, respectively. The higher the process temperature, the higher the c-axis orientation of BTT thin film was. The growth of BTT thin film was affected by the microstructure of the lower layer and the effect of substrate. BTT thin films annealed at 800 degrees C was found to have much improved remanent polarization (P-r) than that at 650 degrees C and 750 degrees C. The P-r and E-c values were measured to be 2 mu C/cm(2) and 100 kV/cm, respectively. The critical grain size existed in BTT thin films, and BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
Transmission electron microscopy study of ferroelectric PbTiO3 thin films by metalorganic chemical vapor deposition

Wen-Hui Ma,Yang-Feng Chen,q p li,Tao Yu,Nai-Ben Ming

DOI: https://doi.org/10.1080/00150199708260518

1997-01-01

Ferroelectrics

Abstract:PbTiO3 thin films have been grown on (100) NaCl by metalorganic chemical vapor deposition. The films were characterized by means of transmission electron microscopy. It is shown that the films were highly c-axis oriented with low-angle grain boundaries. Domain structures and epitaxial mechanisms were also studied.
Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

Ch. Schwan,F. Martin,G. Jakob,J.C. Martinez,H. Adrian

DOI: https://doi.org/10.1007/s100510051056

2000-02-15

Abstract:We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O7-d and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by x-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 \muC/cm. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate 3% contribution of irreversible domain wall motion to the total dielectric constant.

Materials Science
Ferroelectric Batio3 Thin Films On Ni Metal Tapes Using Nio As Buffer Layer

zhiqiang yuan,jianjun liu,j h weaver,c l chen,j c jiang,bowen lin,victor giurgiutiu,a s bhalla,r y guo

DOI: https://doi.org/10.1063/1.2739082

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Ferroelectric BaTiO3 (BTO) thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. These excellent properties indicate that the as-fabricated BTO films are promising for the development of the structural health monitoring systems. (C) 2007 American Institute of Physics.
A Study of 90° Ferroelectric Domain Structures in PbTiO<sub>3</sub>Thin Films by Means of Transmission Electron Microscopy

m a wenhui,Li Qi,Chen Yanfeng,Yu Tao,Shun Li,Min Naiben

DOI: https://doi.org/10.1088/0256-307X/12/12/015

1995-01-01

Chinese Physics Letters

Abstract:PbTiO3 thin films prepared by metalorganic chemical vapor deposition method were investigated using a transmission electron microscope. The as-deposited thin films were highly c-axis oriented, 90° a-c domains were observed and their crystallographic characteristics were investigated. Tetragonality of the PbTiO3 films was also obtained. The disappearance of 90° domains in the very thin film was found and attributed to surface relaxation effect.
High-resolution Electron Microscopy Investigation on Stacking Faults in SrBi2Ta2O9ferroelectric Thin Films Prepared by Metalorganic Deposition

XH Zhu,AD Li,D Wu,T Zhu,ZG Liu,NB Ming

DOI: https://doi.org/10.1080/00150190108008511

IF: 4

2001-01-01

Applied Physics Letters

Abstract:A structural planar defect in the SBT film with 10 mol% excess bismuth grown on Pt/TiO2/SiO2/Si substrates by metalorganic deposition has been observed by means of high-resolution electron microscopy. It was found that the stacking defect was an isolated defect with extra inserted Bi-O planes normal to the c axis. This structural defect is expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra inserted Bi-O planes within the structural defect having higher structural flexibility and alleviating the mechanical stresses and strains, as well as injected-charge problems.

Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

Ferroelectric Batio3 Thin Films on Ti Substrate Fabricated Using Pulsed-Laser Deposition

In Situ TEM Studies of Ferroelectric Thin Films

Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

Direct Observation of Thickness Dependence of Ferroelectricity in Freestanding BaTiO3 Thin Film

Interface Structures and Epitaxial Behavior of Ferroelectric (ba,sr)tio3 Thin Films

Preparation of Nano-Structured BaTiO3 Thin Film by Electrophoretic Deposition and Its Characterization

Microstructures and Surface Step-Induced Antiphase Boundaries in Epitaxial Ferroelectric Ba0.6sr0.4tio3 Thin Film on Mgo

Microstructure Analysis of Ferroelectric Batio3/Srtio3 Heterostructures on Laalo3 Substrates by High Resolution X-Ray Diffraction

Interface Effects on Static and Dynamic Properties of Multiferroic BiFeO3

MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS

Fabrication, physical property and microstructural characterization of ferroelectric BaTiO3 nanofilms

Integration Of Ferroelectric Batio3 Thin Films Directly On Ni And Ti Metallic Tapes For Structural Health Monitoring Systems And Energy Harvest Applications

Ferroelectric state and polarization switching behaviour of ultrafine BaTiO 3 nanoparticles with large-scale size uniformity

In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

Microstructure and Ferroelectric Properties of Bi3titao9 Thin Films by Metalorganic Decomposition Method

Transmission electron microscopy study of ferroelectric PbTiO3 thin films by metalorganic chemical vapor deposition

Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

Ferroelectric Batio3 Thin Films On Ni Metal Tapes Using Nio As Buffer Layer

A Study of 90° Ferroelectric Domain Structures in PbTiO<sub>3</sub>Thin Films by Means of Transmission Electron Microscopy

High-resolution Electron Microscopy Investigation on Stacking Faults in SrBi2Ta2O9ferroelectric Thin Films Prepared by Metalorganic Deposition