Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

Ch. Schwan,F. Martin,G. Jakob,J.C. Martinez,H. Adrian

DOI: https://doi.org/10.1007/s100510051056

2000-02-15

Abstract:We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O7-d and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by x-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 \muC/cm. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate 3% contribution of irreversible domain wall motion to the total dielectric constant.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the ferroelectric properties and crystal structure of BaTiO₃ (barium titanate) thin films in the heterostructure composed of YBa₂Cu₃O₇₋δ (yttrium barium copper oxide, abbreviated as YBCO) bottom electrodes and Au (gold) top electrodes. Specifically, the main objective of the study is to analyze the contribution of domain walls to the dielectric properties of high - quality BaTiO₃ thin films.

### Research Background and Motivation

In recent years, researchers have shown great interest in superconducting field - effect transistors (SuFETs) using (Ba,Sr)TiO₃ as the gate insulator and YBCO as the source - drain channel. With the development of high - frequency superconducting devices, the research on YBCO/ferroelectric material heterostructures has also received increasing attention. Studies have shown that high - quality perovskite ferroelectric thin films can be grown on YBCO electrodes. Therefore, the authors decided to study the ferroelectric and structural properties of the YBCO/BaTiO₃/Au heterostructure at room temperature.

### Research Objectives

1. **Analyze the contribution of domain walls to dielectric properties**: Similar previous studies have mainly focused on the Pt/PbZrxTi₁₋xO₃(PZT)/Pt heterostructure, while this study aims to explore the influence of domain wall movement on the dielectric constant in the YBCO/BaTiO₃/Au heterostructure.
2. **Understand the interaction between domain walls and pinning centers**: Through experimental measurements, study the displacement and vibration of domain walls under low - electric - field conditions, and how these phenomena affect the dielectric response.

### Main Findings

1. **Confirmation of ferroelectric behavior**: Through Sawyer - Tower circuit measurement, the ferroelectric behavior of BaTiO₃ thin films was confirmed, and the coercive field \( E_c = 30 \, \text{kV/cm} \) and the remanent polarization \( P_r = 1.25 \, \mu\text{C/cm}^2 \) were obtained.
2. **Applicability of Rayleigh's law**: Under the condition of being lower than the switching electric field, the change of capacitance with the amplitude of the alternating - voltage conforms to Rayleigh's law, indicating that there is an interaction between domain walls and randomly distributed pinning centers.
3. **Frequency dependence**: The frequency dependence of capacitance shows a logarithmic relationship, which further supports the contribution of domain wall movement to the dielectric constant.

### Conclusions

The research results show that domain wall movement has a significant impact on the dielectric properties of BaTiO₃ thin films. In particular, at an electric field of 5 MV/m, the contribution of irreversible domain wall movement to the total dielectric constant is approximately 3%. Compared with traditional Pt electrodes, YBCO electrodes show better fatigue characteristics in ferroelectric memory applications.

In summary, through a detailed study of the YBCO/BaTiO₃/Au heterostructure, this paper reveals the important influence of domain wall movement on dielectric properties and provides important theoretical and experimental bases for the future application of ferroelectric materials.