In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

C Nelson,P Gao,J Jokisaari,B Winchester,Y Gu,C Heikes,A Melville,C Adamo,S Baek,C Folkman,C Eom,D Schlom,L Chen,X Pan

DOI: https://doi.org/10.1017/s1431927611007677

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

What problem does this paper attempt to address?

In-situ Switching of a Ferroelectric Film Through a Non-ferroelectric Layer and Direct Scanning Probe Analysis of the Same Cross Section

J.R. Jokisaari,P. Gao,X.Q. Pan

DOI: https://doi.org/10.1017/s1431927614010022

IF: 4.0991

2014-01-01

Microscopy and Microanalysis

Abstract:An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Interface Effects on Static and Dynamic Properties of Multiferroic BiFeO3

C.T. Nelson,P. Gao,J.R. Jokisaari,X. Pan,C. Heikes,C. Adamo,A. Melville,D.G. Schlom,S. Baek,C.M. Folkman,C. Eom,B. Winchester,Y. Gu,L. Chen,Y. Liu,J. Li

DOI: https://doi.org/10.1017/s1431927612003455

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
In Situ TEM Studies of Ferroelectric Thin Films

P Gao,C Nelson,J Jokisaari,S Baek,C Eom,E Wang,X Pan

DOI: https://doi.org/10.1017/s1431927611007689

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Understanding magnetoelectric switching in BiFeO$_3$ thin films

Natalya S. Fedorova,Dmitri E. Nikonov,John M. Mangeri,Hai Li,Ian A. Young,Jorge Íñiguez

2023-07-27

Abstract:In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic model of a BiFeO$_3$ film, including the Landau energy of isolated domains as well as the constraints that account for the presence of the substrate and the multidomain configuration found experimentally. We use this model to obtain statistical information about the switching behavior - by running dynamical simulations based on the Landau-Khalatnikov time-evolution equation, including thermal fluctuations - and we thus identify the factors that drive the two-step polarization reversal observed in the experiments. Additionally, we apply our model to test potential strategies for optimizing the switching characteristics.

Materials Science,Strongly Correlated Electrons
Spatially Resolved Mapping of Ferroelectric Switching Behavior in Self-Assembled Multiferroic Nanostructures: Strain, Size, and Interface Effects

Brian J. Rodriguez,Stephen Jesse,Arthur P. Baddorf,T. Zhao,Y. H. Chu,R. Ramesh,Eugene A. Eliseev,Anna N. Morozovska,Sergei V. Kalinin

DOI: https://doi.org/10.1088/0957-4484/18/40/405701

IF: 3.5

2007-01-01

Nanotechnology

Abstract:Local ferroelectric polarization switching in multiferroic BiFeO3–CoFe2O4 nanostructures is studied using switching spectroscopy piezoresponse force microscopy (SS-PFM). Dynamic parameters such as the work of switching are found to vary gradually with distance from the heterostructure interfaces, while nucleation and coercive biases are uniform within the ferroelectric phase. We demonstrate that the electrostatic and elastic fields at interfaces do not affect switching and nucleation behavior. Rather, the observed evolution of switching properties is a geometric effect of the heterointerface on the signal generation volume in PFM. This implies that the heterostructures can be successfully used in devices, since interfaces do not act as preferential sites for switching. At the same time, small systematic variations of switching properties within the ferroelectric component can be ascribed to the long-range elastic and electrostatic fields in the heterostructure, which can be visualized in 2D.
Electrical control of antiferromagnetic domains in multiferroic BiFeO 3 films at room temperature

T. Zhao,A. Scholl,F. Zavaliche,K. Lee,M. Barry,A. Doran,M. P. Cruz,Y. H. Chu,C. Ederer,N. A. Spaldin,R. R. Das,D. M. Kim,S. H. Baek,C. B. Eom,R. Ramesh

DOI: https://doi.org/10.1038/nmat1731

IF: 41.2

2006-01-01

Nature Materials

Abstract:Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In this work, we demonstrate the first observation of electrical control of antiferromagnetic domain structure in a single-phase multiferroic material at room temperature. High-resolution images of both antiferromagnetic and ferroelectric domain structures of (001)-oriented multiferroic BiFeO 3 films revealed a clear domain correlation, indicating a strong coupling between the two types of order. The ferroelectric structure was measured using piezo force microscopy, whereas X-ray photoemission electron microscopy as well as its temperature dependence was used to detect the antiferromagnetic configuration. Antiferromagnetic domain switching induced by ferroelectric polarization switching was observed, in agreement with theoretical predictions.
Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

J He,JC Jiang,EI Meletis,Z Yuan,J Liu,J Weaver,CL Chen,B Lin,V Giurgiutiu,RY Guo,A Bhalla

DOI: https://doi.org/10.1017/s143192760808745x

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

J Jokisaari,C Nelson,S Kim,P Gao,S Baek,C Eom,X Pan

DOI: https://doi.org/10.1017/s1431927611008117

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Magnetization Switching In The Bife0.9mn0.1o3 Thin Films Modulated By Resistive Switching Process

Guang-Yi Chen,Gui-Feng Bi,Lin Song,Yakui Weng,Dan-Feng Pan,Yongchao Li,Shuai Dong,Tao Tang,Jun-Ming Liu,Jianguo Wan

DOI: https://doi.org/10.1063/1.4962906

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Polycrystalline BiFe0.9Mn0.1O3 thin films have been prepared on Pt/Ti/SiO2/Si wafers by a sol-gel process. The film exhibits typical resistive switching (RS) effect. Moreover, accompanied with the RS process, remarkable magnetization switching (MS) behaviors happen, i.e., at low resistance state the film shows high saturation magnetization, while showing low saturation magnetization at high resistance state. We revealed that such a MS effect mainly originates from the conversion of Fe ion valence state between Fe2+ and Fe3+ during the RS process, which was confirmed by the x-ray photoelectron spectroscopy measurements. The further first-principle calculations showed that the doping of Mn into the BiFeO3 could induce an impurity energy level which makes it facile to achieve the conversion of Fe ion valence state. Based on the conductive filament model, a possible mechanism of tuning the MS effect by RS process is proposed, which is closely related to the conversion of Fe ion valence state along with the forming and rupture of conduction filaments. This work provides us a promising avenue to design switchable multistate devices with both electric and magnetic functionalities. Published by AIP Publishing.
Intermediate multidomain state in single-crystalline Mn-doped BiFeO3 thin films during ferroelectric polarization switching

Seiji Nakashima,Koji Kimura,Naohisa Happo,Artoni Kevin R. Ang,Yuta Yamamoto,Halubai Sekhar,Ai I. Osaka,Koichi Hayashi,Hironori Fujisawa

DOI: https://doi.org/10.1038/s41598-024-65215-w

IF: 4.6

2024-06-23

Scientific Reports

Abstract:A intermediate multidomain state and large crystallographic tilting of 1.78° for the ( hh 0) pc planes of a (001) pc -oriented single-domain Mn-doped BiFeO 3 (BFMO) thin film were found when an electric field was applied along the [110] pc direction. The anomalous crystallographic tilting was caused by ferroelastic domain switching of the 109° domain switching. In addition, ferroelastic domain switching occurred via an intermediate multidomain state. To investigate these switching dynamics under an electric field, we used in situ fluorescent X-ray induced Kossel line pattern measurements with synchrotron radiation. In addition, in situ inverse X-ray fluorescence holography (XFH) experiments revealed that atomic displacement occurred under an applied electric field. We attributed the atomic displacement to crystallographic tilting induced by a converse piezoelectric effect. Our findings provide important insights for the design of piezoelectric and ferroelectric materials and devices.

multidisciplinary sciences
Ferroelastic Switching for Nanoscale Non-Volatile Magnetoelectric Devices

S. H. Baek,H. W. Jang,C. M. Folkman,Y. L. Li,B. Winchester,J. X. Zhang,Q. He,Y. H. Chu,C. T. Nelson,M. S. Rzchowski,X. Q. Pan,R. Ramesh,L. Q. Chen,C. B. Eom

DOI: https://doi.org/10.1038/nmat2703

IF: 41.2

2010-01-01

Nature Materials

Abstract:Multiferroics are promising for their ability to use an electric polarization to control magnetism and vice versa. However, ferroelastic effects during the switching of multiferroics such as BiFeO 3 destabilize the ferroelectric state. A new approach for the switching of these sorts of compound may now represent a solution to this problem.
Domain Dynamics During Ferroelectric Switching

Christopher T. Nelson,Peng Gao,Jacob R. Jokisaari,Colin Heikes,Carolina Adamo,Alexander Melville,Seung-Hyub Baek,Chad M. Folkman,Benjamin Winchester,Yijia Gu,Yuanming Liu,Kui Zhang,Enge Wang,Jiangyu Li,Long-Qing Chen,Chang-Beom Eom,Darrell G. Schlom,Xiaoqing Pan

DOI: https://doi.org/10.1126/science.1206980

IF: 56.9

2011-01-01

Science

Abstract:The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic electrode (La(0.7)Sr(0.3)MnO(3)). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.
Unconventional Antiferroelectric Phase Stabilization in Thin Film BiFeO3 by Interface-Induced Rotoelectric Coupling Effect

Y. Kim,A. Kumar,I. Ivanov,A. Tselev,M.D. Biegalski,S.J. Pennycook,S.V. Kalinin,A.Y. Borisevich,A. Hatt,A. Morozovska,E. Eliseev,Y. Chu,P. Yu,R. Ramesh,J. Rondinelli

DOI: https://doi.org/10.1017/s1431927612003911

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

Hyejung Chang,Sergei V. Kalinin,Seungyeul Yang,Pu Yu,Saswata Bhattacharya,Ping P. Wu,Nina Balke,Stephen Jesse,Long Q. Chen,Ramamoorthy Ramesh,Stephen J. Pennycook,Albina Y. Borisevich

DOI: https://doi.org/10.1063/1.3623779

IF: 2.877

2011-09-01

Journal of Applied Physics

Abstract:Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71° domain walls are observed and compared with the results of phase-field modeling. In particular, a preferential nucleation site and direction-dependent pinning of domain walls are observed due to slow kinetics of metastable switching in the sample without a bottom electrode. These in situ spatially resolved observations of a first-order bias-induced phase transition reveal the mesoscopic mechanisms underpinning functionality of a wide range of multiferroic materials.

physics, applied
An in Situ TEM Study of Ferroelastic Domain Mobility

P. Gao,J. Jokisaari,C. Nelson,S.-H. Baek,M. Trassin,C.W. Bark,R. Ramesh,C.-B. Eom,X. Pan

DOI: https://doi.org/10.1017/s1431927613009495

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.
Resistive Switching in Unstructured, Polycrystalline Bifeo3 Thin Films with Downscaled Electrodes

L. Jin,Y. Shuai,X. Ou,P. F. Siles,H. Z. Zeng,T. You,N. Du,D. Buerger,I. Skorupa,S. Zhou,W. B. Luo,C. G. Wu,W. L. Zhang,T. Mikolajick,O. G. Schmidt,H. Schmidt

DOI: https://doi.org/10.1002/pssa.201431298

2014-01-01

Abstract:Resistive switching (RS) has been investigated in unstructured, polycrystalline BiFeO3 thin films with an emphasis on the possibility to downscale the top electrode size. Reproducible RS can be shown for large-scale top and bottom electrodes. However, distinguishable RS is observed when the top electrode is downscaled to the grain size. The microscopic conduction is found to take place within grains. We demonstrate the recovery of homogeneous RS in unstructured, polycrystalline BiFeO3 with downscaled electrodes and reduced conductive unit size by decreasing the BiFeO3 film thickness.
Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature

T Zhao,A Scholl,F Zavaliche,K Lee,M Barry,A Doran,M P Cruz,Y H Chu,C Ederer,N A Spaldin,R R Das,D M Kim,S H Baek,C B Eom,R Ramesh

DOI: https://doi.org/10.1038/nmat1731

Abstract:Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In this work, we demonstrate the first observation of electrical control of antiferromagnetic domain structure in a single-phase multiferroic material at room temperature. High-resolution images of both antiferromagnetic and ferroelectric domain structures of (001)-oriented multiferroic BiFeO3 films revealed a clear domain correlation, indicating a strong coupling between the two types of order. The ferroelectric structure was measured using piezo force microscopy, whereas X-ray photoemission electron microscopy as well as its temperature dependence was used to detect the antiferromagnetic configuration. Antiferromagnetic domain switching induced by ferroelectric polarization switching was observed, in agreement with theoretical predictions.
Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

yongjun li,jianchao ye,xiaoxing ke,gaoyang gou,yan wei,fei xue,jing wang,chuanshou wang,renci peng,xuliang deng,yong yang,xiaobing ren,longqing chen,cewen nan,jinxing zhang

DOI: https://doi.org/10.1002/adfm.201500600

IF: 19

2015-01-01

Advanced Functional Materials

Abstract:Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO3 with a phase mixture, where the material can be reversibly transformed between the soft tetragonal-like and the hard rhombohedral-like structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180 degrees rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.
Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.

Peisen Li,Yonggang Zhao,Sen Zhang,Aitian Chen,Dalai Li,Jing Ma,Yan Liu,Daniel T Pierce,John Unguris,Hong-Guang Piao,Huiyun Zhang,Meihong Zhu,Xiaozhong Zhang,Xiufeng Han,Mengchun Pan,Ce-Wen Nan

DOI: https://doi.org/10.1021/acsami.6b13620

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Intrinsic spatial inhomogeneity or phase separation in cuprates, manganites, etc., related to electronic and/or magnetic properties, has attracted much attention due to its significance in fundamental physics and applications. Here we use scanning Kerr microscopy and scanning electron microscopy with polarization analysis with in situ electric fields to reveal the existence of intrinsic spatial inhomogeneity of the magnetic response to an electric field on a mesoscale with the coexistence of looplike (nonvolatile) and butterfly-like (volatile) behaviors in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructures. Both the experimental results and micromagnetic simulations suggest that these two behaviors come from the 109° and the 71°/180° FE domain switching, respectively, which have a spatial distribution. This FE domain-switching-controlled magnetism is significant for understanding the nature of FM/FE coupling on the mesoscale and provides a path for designing magnetoelectric devices through domain engineering.
Spatially Resolved Polarization Switching Near a Planar Defect by Design: Mesoscopic Mechanisms at Tilt Grain Boundary in Bismuth Ferrite

Brian J. Rodriguez,Samrat Choudhury,Ying‐Hao Chu,Abishek Bhattacharyya,Stephen Jesse,Katyayani Seal,Arthur P. Baddorf,R. Ramesh,Long‐Qing Chen,Sergei V. Kalinin

IF: 29.4

2009-01-01

Advanced Materials

Abstract:The effect of microstructure on ferroelectric domain nucleation in epitaxial bismuth ferrite was probed at a single atomically-defined defect: an artificially fabricated model bicrystal grain boundary (GB). Switching Spectroscopy Piezoresponse Force Microscopy is used to map the variation of local hysteresis loops at the grain boundary and its immediate vicinity. We found the influence of the GB on nucleation to be relatively weak, resulting in a slight shift of the negative nucleation bias to higher (negative) voltages. The mesoscopic mechanisms of grain boundary effect on local polarization switching are studied in detail using phase field modeling, elucidating the complex mechanisms governed by the interplay between ferroelectric and ferroelastic wall energies, depolarization fields, and interface charge. The combination of phase field modeling and SS-PFM allows quantitative analysis of mesoscopic mechanisms for polarization switching, and hence suggests a route for optimizing materials properties through microstructure optimization.

In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

In-situ Switching of a Ferroelectric Film Through a Non-ferroelectric Layer and Direct Scanning Probe Analysis of the Same Cross Section

Interface Effects on Static and Dynamic Properties of Multiferroic BiFeO3

In Situ TEM Studies of Ferroelectric Thin Films

Understanding magnetoelectric switching in BiFeO$_3$ thin films

Spatially Resolved Mapping of Ferroelectric Switching Behavior in Self-Assembled Multiferroic Nanostructures: Strain, Size, and Interface Effects

Electrical control of antiferromagnetic domains in multiferroic BiFeO 3 films at room temperature

Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

Magnetization Switching In The Bife0.9mn0.1o3 Thin Films Modulated By Resistive Switching Process

Intermediate multidomain state in single-crystalline Mn-doped BiFeO3 thin films during ferroelectric polarization switching

Ferroelastic Switching for Nanoscale Non-Volatile Magnetoelectric Devices

Domain Dynamics During Ferroelectric Switching

Unconventional Antiferroelectric Phase Stabilization in Thin Film BiFeO3 by Interface-Induced Rotoelectric Coupling Effect

Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

An in Situ TEM Study of Ferroelastic Domain Mobility

Resistive Switching in Unstructured, Polycrystalline Bifeo3 Thin Films with Downscaled Electrodes

Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature

Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.

Spatially Resolved Polarization Switching Near a Planar Defect by Design: Mesoscopic Mechanisms at Tilt Grain Boundary in Bismuth Ferrite