In-situ Switching of a Ferroelectric Film Through a Non-ferroelectric Layer and Direct Scanning Probe Analysis of the Same Cross Section

J.R. Jokisaari,P. Gao,X.Q. Pan

DOI: https://doi.org/10.1017/s1431927614010022

IF: 4.0991

2014-01-01

Microscopy and Microanalysis

Abstract:An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

What problem does this paper attempt to address?

In Situ TEM Probing of Ferroelectric Switching under Electrical Bias

Xiaoqing Pan,Lin-Ze Li,Mingjie Xu,Sheng Dai,Thomas Blum

DOI: https://doi.org/10.1017/s1431927618009546

IF: 4.0991

2018-01-01

Microscopy and Microanalysis

Abstract:An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

C Nelson,P Gao,J Jokisaari,B Winchester,Y Gu,C Heikes,A Melville,C Adamo,S Baek,C Folkman,C Eom,D Schlom,L Chen,X Pan

DOI: https://doi.org/10.1017/s1431927611007677

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

Hyejung Chang,Sergei V. Kalinin,Seungyeul Yang,Pu Yu,Saswata Bhattacharya,Ping P. Wu,Nina Balke,Stephen Jesse,Long Q. Chen,Ramamoorthy Ramesh,Stephen J. Pennycook,Albina Y. Borisevich

DOI: https://doi.org/10.1063/1.3623779

IF: 2.877

2011-09-01

Journal of Applied Physics

Abstract:Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71° domain walls are observed and compared with the results of phase-field modeling. In particular, a preferential nucleation site and direction-dependent pinning of domain walls are observed due to slow kinetics of metastable switching in the sample without a bottom electrode. These in situ spatially resolved observations of a first-order bias-induced phase transition reveal the mesoscopic mechanisms underpinning functionality of a wide range of multiferroic materials.

physics, applied
Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching

C. Kwamen,M. Rössle,M. Reinhardt,W. Leitenberger,F. Zamponi,M. Alexe,M. Bargheer

DOI: https://doi.org/10.1103/physrevb.96.134105

IF: 3.7

2017-10-10

Physical Review B

Abstract:Monitoring structural changes in ferroelectric thin films during electric field induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms, and domain walls in ferroelectric nanostructures. We combine standard ferroelectric test sequences of switching and nonswitching electrical pulses with time-resolved x-ray diffraction to investigate the structural response of a nanoscale Pb(Zr0.2Ti0.8)O3 ferroelectric oxide capacitor upon charging, discharging, and polarization reversal. We observe that a nonlinear piezoelectric response of the ferroelectric layer develops on a much longer time scale than the RC time constant of the device. The complex atomic motion during the ferroelectric polarization reversal starts with a contraction of the lattice, whereas the expansive piezoelectric response sets in after considerable charge flow due to the applied voltage pulses on the electrodes of the capacitor. Our simultaneous measurements on a working device elucidate and visualize the complex interplay of charge flow and structural motion and challenges theoretical modeling.

physics, condensed matter, applied,materials science, multidisciplinary
Switching Spectroscopic Measurement Of Surface Potentials On Ferroelectric Surfaces Via An Open-Loop Kelvin Probe Force Microscopy Method

Qian Li,Yun Liu,Danyang Wang,Ray Leslie Withers,Zhenrong Li,Haosu Luo,Zhuo Xu

DOI: https://doi.org/10.1063/1.4772511

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We report a method for switching spectroscopy Kelvin probe force microscopy (SS-KPFM). The method is established as a counterpart to switching spectroscopy piezoresponse force microscopy (SS-PFM) in Kelvin probe force microscopy. SS-KPFM yields quantitative information about the surface charge state during a local bias-induced polarization switching process, complementary to the electromechanical coupling properties probed via SS-PFM. Typical ferroelectric samples of a Pb-based relaxor single crystal and a BiFeO3 thin film were investigated using both methods. We briefly discuss the observed surface charging phenomena and their influence on the associated piezoresponse hysteresis loops. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772511]
Domain Dynamics During Ferroelectric Switching

Christopher T. Nelson,Peng Gao,Jacob R. Jokisaari,Colin Heikes,Carolina Adamo,Alexander Melville,Seung-Hyub Baek,Chad M. Folkman,Benjamin Winchester,Yijia Gu,Yuanming Liu,Kui Zhang,Enge Wang,Jiangyu Li,Long-Qing Chen,Chang-Beom Eom,Darrell G. Schlom,Xiaoqing Pan

DOI: https://doi.org/10.1126/science.1206980

IF: 56.9

2011-01-01

Science

Abstract:The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic electrode (La(0.7)Sr(0.3)MnO(3)). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.
Direct Observation of Capacitor Switching Using Planar Electrodes

Nina Balke,Martin Gajek,Alexander K. Tagantsev,Lane W. Martin,Ying-Hao Chu,Ramamoorthy Ramesh,Sergei V. Kalinin

DOI: https://doi.org/10.1002/adfm.201000475

IF: 19

2010-01-01

Advanced Functional Materials

Abstract:Ferroelectric polarization switching in epitaxial (110) BiFeO3 films is studied using piezoresponse force microscopy of a model in‐plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of the kinetics of domain evolution allows clear visualization of nucleation sites, as well as forward and lateral growth stages of domain formation. It is found that the location of the reverse‐domain nucleation is correlated with the direction of switching in a way that the polarization in the domains nucleated at an electrode is always directed away from it. The role of interface charge injection and surface screening charge on switching mechanisms is explored, and the nucleation is shown to be controllable by the bias history of the sample. Finally, the manipulation of domain nucleation through domain structure engineering is illustrated. These studies pave the way for the engineering and design of the ferroelectric device structures through control of individual steps of the switching process.
Spatially Resolved Mapping of Ferroelectric Switching Behavior in Self-Assembled Multiferroic Nanostructures: Strain, Size, and Interface Effects

Brian J. Rodriguez,Stephen Jesse,Arthur P. Baddorf,T. Zhao,Y. H. Chu,R. Ramesh,Eugene A. Eliseev,Anna N. Morozovska,Sergei V. Kalinin

DOI: https://doi.org/10.1088/0957-4484/18/40/405701

IF: 3.5

2007-01-01

Nanotechnology

Abstract:Local ferroelectric polarization switching in multiferroic BiFeO3–CoFe2O4 nanostructures is studied using switching spectroscopy piezoresponse force microscopy (SS-PFM). Dynamic parameters such as the work of switching are found to vary gradually with distance from the heterostructure interfaces, while nucleation and coercive biases are uniform within the ferroelectric phase. We demonstrate that the electrostatic and elastic fields at interfaces do not affect switching and nucleation behavior. Rather, the observed evolution of switching properties is a geometric effect of the heterointerface on the signal generation volume in PFM. This implies that the heterostructures can be successfully used in devices, since interfaces do not act as preferential sites for switching. At the same time, small systematic variations of switching properties within the ferroelectric component can be ascribed to the long-range elastic and electrostatic fields in the heterostructure, which can be visualized in 2D.
Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Peng Gao,Jason Britson,Jacob R. Jokisaari,Christopher T. Nelson,Seung-Hyub Baek,Yiran Wang,Chang-Beom Eom,Long-Qing Chen,Xiaoqing Pan

DOI: https://doi.org/10.1038/ncomms3791

IF: 16.6

2013-01-01

Nature Communications

Abstract:Polarization switching in ferroelectric thin films occurs via nucleation and growth of 180° domains through a highly inhomogeneous process in which the kinetics are largely controlled by defects, interfaces and pre-existing domain walls. Here we present the first real-time, atomic-scale observations and phase-field simulations of domain switching dominated by pre-existing, but immobile, ferroelastic domains in Pb(Zr0.2Ti0.8)O3 thin films. Our observations reveal a novel hindering effect, which occurs via the formation of a transient layer with a thickness of several unit cells at an otherwise charged interface between a ferroelastic domain and a switched domain. This transient layer possesses a low-magnitude polarization, with a dipole glass structure, resembling the dead layer. The present study provides an atomic level explanation of the hindering of ferroelectric domain motion by ferroelastic domains. Hindering can be overcome either by applying a higher bias or by removing the as-grown ferroelastic domains in fabricated nanostructures. In ferroelectric thin films, ferroelastic domains affect the features of polarization switching. Gao et al.perform real-time transmission electron microscopy measurements and show that ferroelastic domains can hinder the switching via formation of a transient interface layer with a dipole glass structure.
Ferroelastic Nanodomain-mediated Mechanical Switching of Ferroelectricity in Thick Epitaxial Films

Qian Li,Bo Wang,Qian He,Pu Yu,Long-Qing Chen,Sergei V. Kalinin,Jing-Feng Li

DOI: https://doi.org/10.1021/acs.nanolett.0c03875

IF: 10.8

2020-12-02

Nano Letters

Abstract:Mechanical switching of ferroelectric polarization, typically realized via a scanning probe, holds promise in (multi)ferroic device applications. Whereas strain gradient-associated flexoelectricity has been regarded to be accountable for mechanical switching in ultrathin (<10 nm) films, such mechanism can hardly be extended to thicker materials due to intrinsic short operating lengths of flexoelectricity. Here, we demonstrate robust mechanical switching in ∼100 nm thick Pb(Zr0.2Ti0.8)O3 epitaxial films with a characteristic microstructure consisting of nanosized ferroelastic domains. Through a combination of multiscale structural characterizations, piezoresponse force microscopy, and phase-field simulations, we reveal that the ferroelastic nanodomains effectively mediate the 180° switching nucleation in a dynamical manner during tip scanning. Coupled with microstructure engineering, this newly revealed mechanism could boost the utility of mechanical switching through extended material systems. Our results also provide insight into competing polarization switching pathways in complex ferroelectric materials, essential for understanding their electromechanical response.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c03875?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c03875</a>.Methods, including sample growth, synchrotron XRD, STEM, PFM, and phase-field simulation analyses, and Figures S1–S6 (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03875/suppl_file/nl0c03875_si_001.pdf">PDF</a>)Movie S1 (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03875/suppl_file/nl0c03875_si_002.mov">MOV</a>)Movie S2 (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03875/suppl_file/nl0c03875_si_003.mov">MOV</a>)Movie S3 (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03875/suppl_file/nl0c03875_si_004.mov">MOV</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Atomic Imaging of Electrically Switchable Striped Domains in β ′‐In 2 Se 3

Zhi Chen,Wei Fu,Lin Wang,Wei Yu,Haohan Li,Clement Kok Yong Tan,Ibrahim Abdelwahab,Yan Shao,Chenliang Su,Mingzi Sun,Bolong Huang,Kian Ping Loh

DOI: https://doi.org/10.1002/advs.202100713

IF: 15.1

2021-07-02

Advanced Science

Abstract:2D ferroelectricity in van-der-Waals-stacked materials such as indium selenide (In2Se3) has attracted interests because the ferroelectricity is robust even in ultrathin layers, which is useful for the miniaturization of ferroelectric field effect transistors. To implement In2Se3 in nanoscale ferroelectric devices, an understanding of the domain structure and switching dynamics in the 2D limit is essential. In this study, a biased scanning tunnelling microscopy (STM) tip is used to locally switch polarized domains in β′-In2Se3, and the reconfiguration of these domains are directly visualized using STM. The room-temperature surface of β′-In2Se3 breaks into 1D nanostriped domains, which changes into a zig-zag striped domains of β″ phase at low temperatures. These two types of domains can coexist, and by applying a tip-sample bias, they can be interchangeably switched locally, showing volatile or nonvolatile like behavior depending on the threshold voltage applied. An atomic model is proposed to explain the switching mechanism based on tip-induced flexoelectric effect and the ferroelastic switching between β′ and β″ phases.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Switching Behaviour of a Thermochromic Ferroelectric Liquid Crystal with High Spontaneous Polarization

A. Jákli,L. Bata,L. A. Beresnev

DOI: https://doi.org/10.1080/00268948908047769

1989-12-01

Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics

Abstract:The switching processes of a planar aligned thermochromic Sc* liquid crystal sample were investigated. Depending on the applied voltages, between the rest unwound states, the following structures can be distinguished. At low voltages—the director field is continuously deformed; at a threshold voltage Ui—an irregular stripe system appeared; at a higher threshold voltage U II (and only if > 70Hz)—a regular stripe system existed. The detailed experimental results regarding these structures, and a phenome-nological explanation are presented here.
Investigations of magneto-elastic coupling in a multiferroic ferrite by in-situ precession diffraction

Shiqing Deng,Shengdong Sun,Ping Miao,Jun Li,Chengchao Xu,Wenbin Wang,Yimei Zhu,Jun Chen,Jing Zhu

DOI: https://doi.org/10.1017/s1431927621007807

IF: 4.0991

2021-01-01

Microscopy and Microanalysis

Abstract:An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

Mingqiang Li,Bo Wang,Heng-Jui Liu,Yen-Lin Huang,Jingmin Zhang,Xiumei Ma,Kaihui Liu,Dapeng Yu,Ying-Hao Chu,Long-Qing Chen,Peng Gao

DOI: https://doi.org/10.1016/j.actamat.2019.04.003

IF: 9.4

2019-01-01

Acta Materialia

Abstract:Reversible switching of non-180° ferroelastic domains that largely alters the local strain distribution enables many electromechanical, electromagnetic and electroacoustic applications. However, in thin films, the ferroelastic domain walls are usually believed to be immobile because of the interface clamping and/or dislocation pinning. Here, using in situ and aberration-corrected transmission electron microscopy, we directly observe reversible switching of individual 90° domains in dislocation-free PbTiO3 thin films and uncover the weakened interface clamping effect. We find the tetragonality is suppressed to ∼1.017 while the polarization vectors rotate 45° in the a-domain near the interface. These huge structural distortions at the interface is mainly responsible for the weakened clamping effect and thus the ability to switch ferroelastic domains. The switching is fully reversible (i.e., either electric field or mechanical stress can re-establish the erased domain) regardless of polarization orientation of the c-domain matrix. Phase-field modeling also shows excellent agreement with experimental observations. Our study reveals the mechanism of controllable and reversible ferroelastic domain switching, enabling the design of new actuators, sensors, and electromagnetic devices.
Mechanism of Switchable and Nonswitchable Short-Circuit Photocurrent Accompanying Polarization Switching in Bi0.9la0.1feo3 Thin Films

R. L. Gao,H. W. Yang,Y. S. Chen,J. R. Sun,Y. G. Zhao,B. G. Shen

DOI: https://doi.org/10.1209/0295-5075/105/37008

2014-01-01

Europhysics Letters

Abstract:The short-circuit photocurrent (I-sc) of Bi0.9La0.1FeO3 epitaxial thin films has been investigated. Switchable and nonswitchable I-sc accompanying polarization switching was observed and it can be explained well using the concepts of drift current and diffusion current controlled by the combination of oxygen vacancies, polarization and conductive domain wall. The sign of photocurrent is independent of the polarization direction when the modulation of photocurrent induced by oxygen vacancies or conductive domain walls is large enough to offset that induced by polarization. Our work provides a deep insight into the nature of photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. Copyright (C) EPLA, 2014
Mechanically Driven Reversible Polarization Switching in Imprinted BiFeO3 Thin Films

Yue Wang,Changqing Guo,Mingfeng Chen,Yuhan Liang,Haojie Han,Hetian Chen,Yuanhua Lin,Di Yi,Houbing Huang,Ce‐Wen Nan,Jing Ma

DOI: https://doi.org/10.1002/adfm.202213787

IF: 19

2023-04-22

Advanced Functional Materials

Abstract:Mechanically driven reversible polarization switching is realized in ferroelectric BiFeO3 thin films. The reversible mechanical switching arises from the interplay among the flexoelectric effect, the piezoelectric effect, and the internal upward built‐in field in BiFeO3 films. This study gains a deeper insight into the mechanism and control of mechanically driven ferroelectric switching, and provides guidance for exploring potential ferroelectric‐based electro‐mechanical microelectronics. Mechanically driven polarization switching via scanning probe microscopy provides a valuable voltage‐free strategy for designing ferroelectric nanodomain structures. However, it is still challenging to realize reversible polarization switching with mechanical forces. Here, the mechanically driven reversible polarization switching observed in imprinted ferroelectric BiFeO3 thin films is reported, i.e., up‐to‐down switching by a sharp scanning tip and down‐to‐up switching by a blunt tip. Free energy calculations, phase‐field simulations, and piezoresponse force microscopy reveal that reversible mechanical switching arises from the interplay among the flexoelectric effect, the piezoelectric effect, and the internal upward built‐in field in BiFeO3 films. This study gains a deeper insight into the mechanism and control of mechanically driven polarization switching, and provides guidance for exploring potential ferroelectric‐based electro‐mechanical microelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ferroelectric switching in ferroelastic materials with rough surfaces

Guangming Lu,Suzhi Li,Xiangdong Ding,Jun Sun,Ekhard K. H. Salje

DOI: https://doi.org/10.1038/s41598-019-52240-3

IF: 4.6

2019-01-01

Scientific Reports

Abstract:Electric switching of non-polar bulk crystals is shown to occur when domain walls are polar in ferroelastic materials and when rough surfaces with steps on an atomic scale promote domain switching. All domains emerging from surface nuclei possess polar domain walls. The progression of domains is then driven by the interaction of the electric field with the polarity of domain boundaries. In contrast, smooth surfaces with higher activation barriers prohibit effective domain nucleation. We demonstrate the existence of an electrically driven ferroelectric hysteresis loop in a non-ferroelectric, ferroelastic bulk material.
Mechanically-Induced Resistive Switching in Ferroelectric Tunnel Junctions

H. Lu,D. J. Kim,C.-W. Bark,S. Ryu,C. B. Eom,E. Y. Tsymbal,A. Gruverman

DOI: https://doi.org/10.1021/nl303396n

IF: 10.8

2012-11-26

Nano Letters

Abstract:Recent advances in atomic-precision processing of oxide ferroelectrics-materials with a stable polarization that can be switched by an external electric field-have generated considerable interest due to rich physics associated with their fundamental properties and high potential for application in devices with enhanced functionality. One of the particularly promising phenomena is the tunneling electroresistance (TER) effect-polarization-dependent bistable resistance behavior of ferroelectric tunnel junctions (FTJ). Conventionally, the application of an electric field above the coercive field of the ferroelectric barrier is required to observe this phenomenon. Here, we report a mechanically induced TER effect in ultrathin ferroelectric films of BaTiO(3) facilitated by a large strain gradient induced by a tip of a scanning probe microscope (SPM). The obtained results represent a new paradigm for voltage-free control of electronic properties of nanoscale ferroelectrics and, more generally, complex oxide materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
The Inlaid Al2o3 Tunnel Switch for Ultrathin Ferroelectric Films

An Quan Jiang,Hyun Ju Lee,Gun Hwan Kim,Cheol Seong Hwang

DOI: https://doi.org/10.1002/adma.200802924

IF: 29.4

2009-01-01

Advanced Materials

Abstract:Ferroelectric switching in ultrathin Al2O3/PZT bilayers is studied and used to modulate the applied electric field, allowing the development of novel applications of the combined dielectric tunnel switch/ferroelectric functional layer that can assist in the development of completely new types of electronic, electromechanical, and electrochemical devices.
Switchable tribology of ferroelectrics

Seongwoo Cho,Iaroslav Gaponenko,Kumara Cordero-Edwards,Jordi Barceló-Mercader,Irene Arias,Daeho Kim,Céline Lichtensteiger,Jiwon Yeom,Loïc Musy,Hyunji Kim,Seung Min Han,Gustau Catalan,Patrycja Paruch,Seungbum Hong

DOI: https://doi.org/10.1038/s41467-023-44346-0

IF: 16.6

2024-01-09

Nature Communications

Abstract:Abstract Switchable tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe—down domains have lower friction coefficients and show slower wear rates than up domains and can be used as smart masks. This asymmetry is enabled by flexoelectrically coupled polarization in the up and down domains under a sufficiently high contact force. Moreover, we determine that this polarization-sensitive tribological asymmetry is widely applicable across various ferroelectrics with different chemical compositions and crystalline symmetry. Finally, using this switchable tribology and multi-pass patterning with a domain-based dynamic smart mask, we demonstrate three-dimensional nanostructuring exploiting the asymmetric wear rates of up and down domains, which can, furthermore, be scaled up to technologically relevant (mm–cm) size. These findings demonstrate that ferroelectrics are electrically tunable tribological materials at the nanoscale for versatile applications.

multidisciplinary sciences

In-situ Switching of a Ferroelectric Film Through a Non-ferroelectric Layer and Direct Scanning Probe Analysis of the Same Cross Section

In Situ TEM Probing of Ferroelectric Switching under Electrical Bias

In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching

Switching Spectroscopic Measurement Of Surface Potentials On Ferroelectric Surfaces Via An Open-Loop Kelvin Probe Force Microscopy Method

Domain Dynamics During Ferroelectric Switching

Direct Observation of Capacitor Switching Using Planar Electrodes

Spatially Resolved Mapping of Ferroelectric Switching Behavior in Self-Assembled Multiferroic Nanostructures: Strain, Size, and Interface Effects

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Ferroelastic Nanodomain-mediated Mechanical Switching of Ferroelectricity in Thick Epitaxial Films

Atomic Imaging of Electrically Switchable Striped Domains in β ′‐In 2 Se 3

Switching Behaviour of a Thermochromic Ferroelectric Liquid Crystal with High Spontaneous Polarization

Investigations of magneto-elastic coupling in a multiferroic ferrite by in-situ precession diffraction

Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

Mechanism of Switchable and Nonswitchable Short-Circuit Photocurrent Accompanying Polarization Switching in Bi0.9la0.1feo3 Thin Films

Mechanically Driven Reversible Polarization Switching in Imprinted BiFeO3 Thin Films

Ferroelectric switching in ferroelastic materials with rough surfaces

Mechanically-Induced Resistive Switching in Ferroelectric Tunnel Junctions

The Inlaid Al2o3 Tunnel Switch for Ultrathin Ferroelectric Films

Switchable tribology of ferroelectrics