Electric scanning probe imaging and modification of ferroelectric surfaces

Sergei V. Kalinin,Dawn A. Bonnell

DOI: https://doi.org/10.48550/arXiv.cond-mat/0301535

2003-01-28

Abstract:Electric Scanning Probe Microscopies are used to characterize the surface behavior of ferroelectric materials. The effects of local charge density on the chemistry and physics of ferroelectric surfaces are investigated. The kinetics and thermodynamics parameters of adsorption are assessed by variable temperature Scanning Surface Potential Microscopy. Contrast formation mechanism of Piezoresponse Force Microscopy (PFM) is analyzed in detail, and the contributions of electroelastic constants of the material to response amplitude are determined. The effect of experimental conditions including indentation force and tip radius of curvature is elucidated using PFM Contrast Mechanism Maps. Simple quantitative criterion for non-local cantilever-surface interactions in PFM is developed.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the local ferroelectric properties on the surface of ferroelectric materials, especially the characteristics at the nanoscale. Specifically, the author focuses on how to characterize and control the polarization characteristics of ferroelectric materials through scanning probe microscopy (SPM) techniques. The following are the main issues involved in the paper:

1. **Understanding local ferroelectric properties**: With the development of oxide electronic devices (such as micro - electro - mechanical systems (MEMS), non - volatile ferroelectric memories (FeRAMs) and ferroelectric heterostructures), it is necessary to have an in - depth understanding of the local ferroelectric properties of ferroelectric materials at the nanoscale.

2. **SPM imaging and control**: Research on how different SPM techniques (such as electrostrictive force microscopy (EFM), scanning surface potential microscopy (SSPM), piezoelectric force microscopy (PFM), scanning capacitance microscopy (SCM), near - field optical microscopy (NSOM), etc.) are used for the imaging and control of ferroelectric materials.

3. **Quantitative measurement and interpretation**: In addition to the qualitative observation of ferroelectric domain structures and orientations, it is also necessary to be able to carry out quantitative measurements to understand the local material properties. For example, voltage spectroscopy (i.e., local hysteresis loop measurement) can provide important information about ferroelectric behavior, but its interpretation is challenging.

4. **Temperature dependence and charge dynamics**: Research on the changes in domain structures of ferroelectric materials at different temperatures and their effects on surface charge dynamics. This includes observing the evolution of domain structures during the ferroelectric phase transition process and the domain potential reversal phenomenon caused by temperature.

5. **Contrast mechanism analysis**: Explore the contrast formation mechanisms of different SPM techniques (such as EFM, SSSPM and PFM), especially the relative magnitudes between the electrostatic and electromagnetomechanical contributions. This is crucial for understanding experimental results and optimizing measurement methods.

### Formula summary

- **Frequency shift formula for electrostrictive force microscopy (EFM)**:
\[
\Delta\omega=\frac{3}{2}\frac{\partial^{2}F_{z}}{\partial z^{2}}\left(\frac{\Delta z}{k}\right)
\]
where \(k\) is the spring constant of the cantilever, \(\omega_{0}\) is the resonance frequency of the cantilever, and \(\Delta z\) is the change in the distance between the cantilever and the sample.

- **Capacitive force formula for scanning surface potential microscopy (SSPM)**:
\[
F_{cap}(z)=-\frac{1}{2}\left(\frac{\partial C(z)}{\partial z}\right)(V_{tip}-V_{s})^{2}
\]
where \(C(z)\) is the capacitance between the tip and the surface, \(V_{tip}\) is the tip voltage, and \(V_{s}\) is the surface potential.

- **Temperature - dependent relaxation time formula**:
\[
\Delta\phi(t)=A\exp\left(-\frac{t}{\tau}\right)+\Delta\phi_{0}
\]
where \(\tau\) is the relaxation time, \(A\) is the pre - factor, and \(\Delta\phi_{0}\) is the domain potential difference at equilibrium.

These formulas and research contents together reveal the complexity and diversity of the surface characteristics of ferroelectric materials, providing a theoretical basis and technical means for future research.