PFM and TEM Characterization of Polarization in Ferroelectric BFO under Changing Mechanical Constraints

J.R. Jokisaari,P. Gao,X. Pan

DOI: https://doi.org/10.1017/s1431927613011628

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

What problem does this paper attempt to address?

Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

J Jokisaari,C Nelson,S Kim,P Gao,S Baek,C Eom,X Pan

DOI: https://doi.org/10.1017/s1431927611008117

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
In Situ TEM Studies of Ferroelectric Thin Films

P Gao,C Nelson,J Jokisaari,S Baek,C Eom,E Wang,X Pan

DOI: https://doi.org/10.1017/s1431927611007689

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
An in Situ TEM Study of Ferroelastic Domain Mobility

P. Gao,J. Jokisaari,C. Nelson,S.-H. Baek,M. Trassin,C.W. Bark,R. Ramesh,C.-B. Eom,X. Pan

DOI: https://doi.org/10.1017/s1431927613009495

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.
Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films

D. Hitchen,S. Ghosh

DOI: https://doi.org/10.5210/jur.v4i1.7483

2010-10-01

The Journal of Undergraduate Research at the University of Illinois at Chicago

Abstract:The polarization hysteresis and current leakage characteristics of bismuth ferrite, BiFeO3 (BFO) thin films deposited by pulsed laser deposition was measured while varying the temperature from 80 - 300 K in increments of 10 K, to determine the feasibility of BFO for capacitive applications in memory storage devices. Data is compared to the performance of prototypic ferroelectric barium strontium titanate, BaxSr1-xTiO3 (BST) under similar conditions. Finding contacts on the BFO samples that exhibited acceptable dielectric properties was challenging; and once identified, the polarization characteristics between them varied greatly. However, the non-uniformity among the contact points within each sample suggests that either the samples were defective (by contamination or growth process), or that the deposition process of the contacts may have undermined the functionality of the devices. Subjected to increasing temperatures, BFO's polarization improved, and though its polarizability was shown to be inferior to BST, the dielectric loss was less.
Influence of Bulk Polarization and Surface Polarity on Surface Reconstructions and Related Local Properties of Multiferroic BiFeO3 Film

L. Jin,X. P. Xu,Y. Zeng,L. Lu,J. Barthel,T. Schulthess,R. E. Dunin-Borkowski,H. Wang,C. L. Jia

DOI: https://doi.org/10.1017/s1431927617008972

IF: 4.0991

2017-01-01

Microscopy and Microanalysis

Abstract:The surfaces of perovskite oxides undergo surface relaxation and reconstruction owing to the breaking of translational symmetry. Coupling between lattice and order parameters, such as polarization ( P s ) in ferroelectrics and/or polarity in polar structures, has a strong impact on surface relaxation and reconstruction. The resulting surface structures can affect samples with large surface to volume ratios and devices that rely on interfacial coupling or interaction. Until now, surface structures that involve the termination of both matrix P s and polar atomic planes have received little attention, in particular on the atomic scale. Here, we present an atomic-scale study of the surfaces of multiferroic BiFeO 3 (BFO) thin films using atomic-resolution scanning transmission electron microscopy (STEM) and spectroscopy combined with first-principles density functional theory (DFT) calculations. Two distinct surface structures are revealed and the local ferroelectric and magnetic properties are deduced on the basis of atomic positions in a DFT-calculated model. Our results provide a structural basis for tuning the local multiferroic properties of BFO by controlling electrical boundary conditions and
Interface Effects on Static and Dynamic Properties of Multiferroic BiFeO3

C.T. Nelson,P. Gao,J.R. Jokisaari,X. Pan,C. Heikes,C. Adamo,A. Melville,D.G. Schlom,S. Baek,C.M. Folkman,C. Eom,B. Winchester,Y. Gu,L. Chen,Y. Liu,J. Li

DOI: https://doi.org/10.1017/s1431927612003455

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Studying the Polarization Switching in Polycrystalline BiFeO3 Films by 2D Piezoresponse Force Microscopy

Yaming Jin,Xiaomei Lu,Junting Zhang,Yi Kan,Huifeng Bo,Fengzhen Huang,Tingting Xu,Yingchao Du,Shuyu Xiao,Jinsong Zhu

DOI: https://doi.org/10.1038/srep12237

IF: 4.6

2015-01-01

Scientific Reports

Abstract:For rhombohedral multiferroelectrics, non-180° ferroelectric domain switching may induce ferroelastic and/or (anti-)ferromagnetic effect. So the determination and control of ferroelectric domain switching angles is crucial for nonvolatile information storage and exchange-coupled magnetoelectric devices. We try to study the intrinsic characters of polarization switching in BiFeO3 by introducing a special data processing method to determine the switching angle from 2D PFM (Piezoresponse Force Microscopy) images of randomly oriented samples. The response surface of BiFeO3 is first plotted using the piezoelectric tensor got from first principles calculations. Then from the normalized 2D PFM signals before and after switching, the switching angles of randomly oriented BiFeO3 grains can be determined through numerical calculations. In the polycrystalline BiFeO3 films, up to 34% of all switched area is that with original out-of-plane (OP) polarization parallel to the poling field. 71° polarization switching is more favorable, with the area percentages of 71°, 109° and 180° domain switching being about 42%, 29% and 29%, respectively. Our analysis further reveals that IP stress and charge migration have comparable effect on switching, and they are sensitive to the geometric arrangements. This work helps exploring a route to control polarization switching in BiFeO3, so as to realize desirable magnetoelectric coupling.
Ptychographic Nanoscale Imaging of the Magnetoelectric Coupling in Freestanding BiFeO3

Tim A. Butcher,Nicholas W. Phillips,Chun‐Chien Chiu,Chia‐Chun Wei,Sheng‐Zhu Ho,Yi‐Chun Chen,Erik Fröjdh,Filippo Baruffaldi,Maria Carulla,Jiaguo Zhang,Anna Bergamaschi,Carlos A. F. Vaz,Armin Kleibert,Simone Finizio,Jan‐Chi Yang,Shih‐Wen Huang,Jörg Raabe

DOI: https://doi.org/10.1002/adma.202311157

IF: 29.4

2024-02-25

Advanced Materials

Abstract:Understanding the magnetic and ferroelectric ordering of magnetoelectric multiferroic materials at the nanoscale necessitates a versatile imaging method with high spatial resolution. Here, soft X‐ray ptychography was employed to simultaneously image the ferroelectric and antiferromagnetic domains in an 80 nm thin freestanding film of the room‐temperature multiferroic BiFeO3 (BFO). The antiferromagnetic spin cycloid of period 64 nm was resolved by reconstructing the corresponding resonant elastic X‐ray scattering in real space and visualized together with mosaic‐like ferroelectric domains in a linear dichroic contrast image at the Fe L3 edge. The measurements reveal a near perfect coupling between the antiferromagnetic and ferroelectric ordering by which the propagation direction of the spin cycloid is locked orthogonally to the ferroelectric polarization. In addition, the study evinces both a preference for in‐plane propagation of the spin cycloid and changes of the ferroelectric polarization by 71° between multiferroic domains in the epitaxial strain‐free, freestanding BFO film. The results provide a direct visualization of the strong magnetoelectric coupling in BFO and of its fine multiferroic domain structure, emphasizing the potential of ptychographic imaging for the study of multiferroics and non‐collinear magnetic materials with soft X‐rays. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Direct Observations of Retention Failure in Ferroelectric Memories by in Situ Transmission Electron Microscopy

P. Gao,C. Nelson,J. Jokisaari,Y. Zhang,X. Pan,S. Baek,C. Bark,C. Eom

DOI: https://doi.org/10.1017/s1431927612011087

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Ptychographic nanoscale imaging of the magnetoelectric coupling in freestanding BiFeO$_3$

Tim A. Butcher,Nicholas W. Phillips,Chun-Chien Chiu,Chia-Chun Wei,Sheng-Zhu Ho,Yi-Chun Chen,Erik Fröjdh,Filippo Baruffaldi,Maria Carulla,Jiaguo Zhang,Anna Bergamaschi,Carlos A. F. Vaz,Armin Kleibert,Simone Finizio,Jan-Chi Yang,Shih-Wen Huang,Jörg Raabe

DOI: https://doi.org/10.1002/adma.202311157

2024-06-30

Abstract:Understanding the magnetic and ferroelectric ordering of magnetoelectric multiferroic materials at the nanoscale necessitates a versatile imaging method with high spatial resolution. Here, soft X-ray ptychography is employed to simultaneously image the ferroelectric and antiferromagnetic domains in an 80 nm thin freestanding film of the room-temperature multiferroic BiFeO$_3$ (BFO). The antiferromagnetic spin cycloid of period 64 nm is resolved by reconstructing the corresponding resonant elastic X-ray scattering in real space and visualized together with mosaic-like ferroelectric domains in a linear dichroic contrast image at the Fe L$_3$ edge. The measurements reveal a near perfect coupling between the antiferromagnetic and ferroelectric ordering by which the propagation direction of the spin cycloid is locked orthogonally to the ferroelectric polarization. In addition, the study evinces both a preference for in-plane propagation of the spin cycloid and changes of the ferroelectric polarization by 71° between multiferroic domains in the epitaxial strain-free, freestanding BFO film. The results provide a direct visualization of the strong magnetoelectric coupling in BFO and of its fine multiferroic domain structure, emphasizing the potential of ptychographic imaging for the study of multiferroics and non-collinear magnetic materials with soft X-rays.

Materials Science,Mesoscale and Nanoscale Physics
In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

C Nelson,P Gao,J Jokisaari,B Winchester,Y Gu,C Heikes,A Melville,C Adamo,S Baek,C Folkman,C Eom,D Schlom,L Chen,X Pan

DOI: https://doi.org/10.1017/s1431927611007677

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Mechanical Nanoscale Polarization Control in Ferroelectric PVDF‐TrFE Films

Robert Roth,Martin M. Koch,A. Diana Rata,Kathrin Dörr

DOI: https://doi.org/10.1002/aelm.202101416

IF: 6.2

2022-04-20

Advanced Electronic Materials

Abstract:PVDF‐TrFE ferroelectric polymer films offer strong advantages like mechanical flexibility and biocompatibility for electronic devices like memories, piezoelectric sensors, and energy harvesters. Enhancing the crystalline order makes low‐cost polymer films competitive among ferroelectric materials. Here, mechanical control of the polarization orientation using a force microscopy tip is demonstrated and attributed to a ferroelastic response.Ferroelectric polymer films offer strong advantages like mechanical flexibility, biocompatibility, optical transparency, and low‐cost processing. However, their dielectric or piezoelectric performance is often inferior to that of oxide ferroelectric materials. Key to the dielectric or piezoelectric performance of semicrystalline polymers is the enhancement of electric dipolar order that is naturally lower than in crystalline ferroelectrics. Here, reorientation and alignment of the electric polarization in thin films by the mechanical effect of a scanning unbiased force microscopy tip is demonstrated as a versatile tool for nanoscale domain writing. Thin films (50–150 nm) of PVDF‐TrFE (78:22) on graphite are prepared with dense (110)‐oriented β‐phase lamellae randomly oriented in the film plane. The in‐plane polarization can be poled "mechanically" along any deliberately chosen direction in the film plane after vertical electric poling. Domain patterns with resolution down to ≈50 nm are written with four (out of six possible) local polarization orientations. Written domains show excellent long‐time stability. The surface roughening from the mechanical treatment is moderate (rms roughness of 2–3 nm). A ferroelastic origin of the mechanical polarization switching is discussed. Finally, suggestions are made how to utilize the domain patterns in thin film devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response

Subhajit Pal,Emanuele Palladino,Haozhen Yuan,Muireann Anna de H-Óra,Judith L MacManus-Driscoll,Jorge Ontaneda,Vivek Dwij,Vasant G Sathe,Joe Briscoe

DOI: https://doi.org/10.1021/acsaelm.4c00875

2024-09-16

Abstract:Piezoresponse force microscopy (PFM) is a robust characterization technique to explore ferroelectric properties at the nanoscale. However, the PFM signal can lead to misinterpretation of results due to the dominant electrostatic interaction between the tip and the sample. In this work, a detailed calibration process is presented and a procedure to identify the parasitic phase offset is demonstrated. To obtain artifact-free phase-amplitude loops, a methodology is developed by combining the outcomes from switching spectroscopy-PFM (SS-PFM) and Kelvin probe force microscopy (KPFM). It is demonstrated that the phase and amplitude loops obtained from SS-PFM at a specific read voltage, ascertained from the surface potential by KPFM, can convey accurate electromechanical information. These methodologies are applied to quantify the imprint voltage in BaTiO3 and BiFeO3, along with vertically aligned BaTiO3:Sm2O3 and BaTiO3:MgO nanocomposites. The variation of the imprint voltage measured under different tip voltages demonstrates the importance of selecting the correct read voltage in determining the local imprint voltage. Additionally, 2D imprint voltage maps in each domain of a BaTiO3 single crystal are obtained using the datacube-PFM technique, which allows pixel-by-pixel determination of artifact-free spatial variation of PFM phase-amplitude response.
PFM Study of the 90 Degrees Step-by-Step Domain Switching and the Temperature Effect in 0.8Pbtio(3)-0.2Bi(mg0.5ti0.5)o-3 Ferroelectric Thin Film

He Dongyu,Liu Yuxin

DOI: https://doi.org/10.11900/0412.1961.2018.00107

IF: 1.797

2019-01-01

ACTA METALLURGICA SINICA

Abstract:In ferroelectrics, the presence of domain structures and switchable polarization plays an important role in ferroelectric performance and the design of future electronic devices. Understanding domain behaviors is crucial for ferroelectrics promising applications, particularly in nonvolatile memory, microwave ceramics, electromechanical sensors and actuators. As a convenient, nondestructive and high-resolution technique, the piezoresponse force microscopy (PFM) provides a powerful method for observing domain structures and their dynamic behavior at the micron and nanometer scales. In this work, PFM has been used to study the domain structures and their dynamic behavior of 0.8PbTiO(3)-0.2Bi(Mg0.5Ti0.5)O-3 thin film. Both the a domain and the c domain coexist in the ferroelectric thin film nanometer grains. Under the tip-bias-induced electric field, the domain switching follows the two 90 degrees steps of 180 degrees domain switching, showing the domain polarization change from c to a to c. A remarkable effect of temperature on the domain configurations and domain dynamic response in 0.8PbTiO(3)-0.2Bi(Mg0.5Ti0.5)O-3 thin film was found by PFM. Under the tip bias voltage of 5 V, domain evolution was more rapid with a higher temperature at 70 degrees C. The surface charge is related with c domain polarization. At high temperature, the surface charge induced effective electric filed increases, allowing for the easier domain motion.
Quantification of polarization distribution from polarizing light microscopy images of ferroelectric single crystals

Jinhui Fan,Xiaoyan Lu,Wenwu Cao

DOI: https://doi.org/10.1016/j.jmst.2023.03.029

2023-04-01

Abstract:Qualification of polarization can be realized either on a macroscopic scale as an average property by P-E hysteresis measurements or on a nano/micro scale by piezoelectric force microscopy, transmission electron microscopy, scanning electron microscopy, and so on. However, visualization and qualification of polarization distribution in the micron to millimeter scale is still a challenge. Polarizing light microscopy (PLM) is often used in the study of ferroelectric domain structures mainly for domain patterns. A phenomenon called “chromatic polarization” has been observed in transparent ferroelectric crystals by using a crossed-PLM system viewed with white light, which contains rich information about local polarization distribution. In this study, an automatic full-angle light intensity detection (AFALID) algorithm combined with colorimetry is developed to analyze the distribution of nonuniform local spontaneous polarization distribution in transparent ferroelectric single crystals. Temperature-dependent spontaneous polarizations from the color analysis for PMN-0.36PT single crystals with single tetragonal domain state are in good coincidence with those extracted from temperature-dependent hysteresis loops and pyroelectric current measurements. We further apply this method to quantify the nonuniform domain distributions with nano-indentations. This non-contact and non-destructive characterization can provide fast and automatic detection of polarization distributions in ferroelectric materials.
Local Probing of the Non-Uniform Distribution of Ferrielectric and Antiferroelectric Phases

Huimin Qiao,Fangping Zhuo,Zhen Liu,Jinxing Wang,Jeongdae Seo,Chenxi Wang,Jinho Kang,Bin Yang,Yunseok Kim

DOI: https://doi.org/10.1007/s12274-022-4908-z

IF: 9.9

2022-01-01

Nano Research

Abstract:Piezoresponse force microscopy (PFM) is an indispensable tool in the investigation of local electromechanical responses and polarization switching. The acquired data provide spatial information on the local disparity of polarization switching and electromechanical responses, making this technique advantageous over macroscopic approaches. Despite its widespread application in ferroelectrics, it has rarely been used to investigate the ferrielectric (FiE) behaviors in antiferroelectric (AFE) materials. Herein, the PFM was utilized to study the local electromechanical behavior and distribution of FiE, and the AFE phases of PbZrO3 thin-film were studied, where only the FiE behavior is observable using a macroscopic approach. The FiE region resembles a ferroelectric material at low voltages but exhibits a unique on-field amplitude response at high voltages. In contrast, the AFE region only yields an observable response at high voltages. Phase-field simulations reveal the coexistence of AFE and FiE states as well as the phase-transition processes that underpin our experimental observations. Our work illustrates the usefulness of PFM as an analytical tool to characterize AFE/FiE materials and their phase-coexistence behavior, thereby providing insights to guide property modification and potential applications.
Multiferroic 0.7bifeo3–0.3pbtio3 Thin Films Prepared by a Sol–gel Method

Huichun Yu,Haiyan Guo,Weimin Zhu,Jian Zhuang,Wei Ren,Zuo-Guang Ye

DOI: https://doi.org/10.1016/j.tsf.2015.02.021

IF: 2.1

2015-01-01

Thin Solid Films

Abstract:Multiferroic 0.7BiFeO3–0.3PbTiO3 (BFO–PT) thin films have been prepared by a sol–gel method on Pt/Ti/SiO2/Si substrates. A strong dielectric dispersion was observed above 10kHz and a relatively low dielectric loss was found at low frequencies. The BFO–PT thin films exhibit both ferroelectricity and (week) ferromagnetism with Pr=13.7μC/cm2 and MS=3200A/m at room temperature, confirming the multiferroic properties. The local polar domain structure and ferroelectric switching of the thin films were investigated by piezoresponse force microscopy.
Structure and Ferroelectric Photovoltaic Effect Modulation in the Epitaxial BiFeO3/La0.5Sr0.5CO3 Heterostructures

Chenxi Wang,Yufei Song,Linqian Wu,Chen Xue,Haoxiang Feng,Haitao Li,Jianmin Song,Xiangui Zhang,Bin Zou,Kaiming Zhu

DOI: https://doi.org/10.1016/j.micrna.2024.207956

2024-01-01

Micro and Nanostructures

Abstract:Square-shaped BiFeO3 (BFO) thin films were prepared on SrTiO3 (STO) substrates by off-axis magnetron sputtering using La0.5Sr0.5CoO3 (LSCO) as the bottom electrode, and both LSCO and BFO are perovskite structure. The BFO crystalline quality improves and the grain size becomes larger as the thickness H increases, and both have smaller mean square roughness. The effects of BFO thickness H, light intensity I-p and ambient temperature AT on the ferroelectric photovoltaic effect (FPE) for the Pt/BFO/LSCO heterostructures are significant. With the H increase, the open-circuit voltage V-oc and short-circuit current J(sc) increase linearly, with V-oc up to 0.44 V. The short-circuit current modulation intensity Delta J(sc) follows the Delta J(sc-300)>Delta J(sc-200)>Delta J(sc-100) rule. With the I-p increase, Pt/BFO(300 nm)/LSCO' J(sc) increases linearly, and V-oc first increases and then tends to saturation, which satisfies Glass' law. With the AT increases, V-oc is linearly decreasing and J(sc) shows the law: decreasing -> increasing -> decreasing. The polarization-modulated FPE mechanism is investigated by analyzing the Pt/BFO/LSCO energy band structure, which is attributed to the coupling effect between the BFO depolarization field (E-dp) and the built-in electric field at the interface (E-Pt/BFO & E-BFO/LSCO), and the FPE mechanism is shifted from the interface barrier domination to the ferroelectric polarization domination as H increases.
Characterization of Thermo-optical Properties of Ferroelectric P(VDF-TrFE) Copolymer Using Febry-Perot Interferometer

Jinsang Kim,Seok-Jin Yoon,D. Jeong,H. Song

DOI: https://doi.org/10.3740/MRSK.2009.19.4.228

2009-04-27

Abstract:Phase transition in ferroelectric polymer is very interesting behavior and has been widely studied for real device applications, such as actuators and sensors. Through the phase transition, there is structural change resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perot interferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50 mol% copolymer, and thermo-optical properties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as 2.3~3.8 ×10 /K in the ferroelectric temperature region (45 C~65 C) and 6.0×10 /K in the phase transition temperature region (65 C~85 C), which is a larger than optical silica-fiber and PMMA. The resonance transmission peak of P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transition temperature of the polymer in heating condition was higher than in the cooling condition. The elimination of the hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

Physics,Engineering,Materials Science
Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy.

Nina Balke,Petro Maksymovych,Stephen Jesse,Andreas Herklotz,Alexander Tselev,Chang-Beom Eom,Ivan I. Kravchenko,Pu Yu,Sergei V. Kalinin

DOI: https://doi.org/10.1021/acsnano.5b02227

IF: 17.1

2015-01-01

ACS Nano

Abstract:Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. We will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In the end, we apply the developed measurement protocols to an unknown ferroelectric material.

PFM and TEM Characterization of Polarization in Ferroelectric BFO under Changing Mechanical Constraints

Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

In Situ TEM Studies of Ferroelectric Thin Films

An in Situ TEM Study of Ferroelastic Domain Mobility

Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films

Influence of Bulk Polarization and Surface Polarity on Surface Reconstructions and Related Local Properties of Multiferroic BiFeO3 Film

Interface Effects on Static and Dynamic Properties of Multiferroic BiFeO3

Studying the Polarization Switching in Polycrystalline BiFeO3 Films by 2D Piezoresponse Force Microscopy

Ptychographic Nanoscale Imaging of the Magnetoelectric Coupling in Freestanding BiFeO3

Direct Observations of Retention Failure in Ferroelectric Memories by in Situ Transmission Electron Microscopy

Ptychographic nanoscale imaging of the magnetoelectric coupling in freestanding BiFeO$_3$

In-Situ Cross-Sectional Switching of Multiferroic BiFeO3 Thin Films

Mechanical Nanoscale Polarization Control in Ferroelectric PVDF‐TrFE Films

Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response

PFM Study of the 90 Degrees Step-by-Step Domain Switching and the Temperature Effect in 0.8Pbtio(3)-0.2Bi(mg0.5ti0.5)o-3 Ferroelectric Thin Film

Quantification of polarization distribution from polarizing light microscopy images of ferroelectric single crystals

Local Probing of the Non-Uniform Distribution of Ferrielectric and Antiferroelectric Phases

Multiferroic 0.7bifeo3–0.3pbtio3 Thin Films Prepared by a Sol–gel Method

Structure and Ferroelectric Photovoltaic Effect Modulation in the Epitaxial BiFeO3/La0.5Sr0.5CO3 Heterostructures

Characterization of Thermo-optical Properties of Ferroelectric P(VDF-TrFE) Copolymer Using Febry-Perot Interferometer

Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy.