PFM Study of the 90 Degrees Step-by-Step Domain Switching and the Temperature Effect in 0.8Pbtio(3)-0.2Bi(mg0.5ti0.5)o-3 Ferroelectric Thin Film

He Dongyu,Liu Yuxin
DOI: https://doi.org/10.11900/0412.1961.2018.00107
IF: 1.797
2019-01-01
ACTA METALLURGICA SINICA
Abstract:In ferroelectrics, the presence of domain structures and switchable polarization plays an important role in ferroelectric performance and the design of future electronic devices. Understanding domain behaviors is crucial for ferroelectrics promising applications, particularly in nonvolatile memory, microwave ceramics, electromechanical sensors and actuators. As a convenient, nondestructive and high-resolution technique, the piezoresponse force microscopy (PFM) provides a powerful method for observing domain structures and their dynamic behavior at the micron and nanometer scales. In this work, PFM has been used to study the domain structures and their dynamic behavior of 0.8PbTiO(3)-0.2Bi(Mg0.5Ti0.5)O-3 thin film. Both the a domain and the c domain coexist in the ferroelectric thin film nanometer grains. Under the tip-bias-induced electric field, the domain switching follows the two 90 degrees steps of 180 degrees domain switching, showing the domain polarization change from c to a to c. A remarkable effect of temperature on the domain configurations and domain dynamic response in 0.8PbTiO(3)-0.2Bi(Mg0.5Ti0.5)O-3 thin film was found by PFM. Under the tip bias voltage of 5 V, domain evolution was more rapid with a higher temperature at 70 degrees C. The surface charge is related with c domain polarization. At high temperature, the surface charge induced effective electric filed increases, allowing for the easier domain motion.
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