Abstract:Defects in ferroelectric materials can cause microscopic strain and electron doping, which opens up new possibilities for unique physical properties in nanoelectronics. However, comprehending the relationship between these deep-buried defect configurations and the resulting physical properties is a long-term challenge. Here, utilizing the integrated differential phase imaging technique equipped in scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy, we show the full element-resolved atomic configuration of characteristic extrinsic defects in Nb-doped epitaxial BiFeO 3 thin films. Atomic-resolution characterization reveals that the Nb doping substitutes Fe at the center of an oxygen octahedron and creates Fe vacancies near the defect core, leading to the formation of one perovskite cell-wide BiNbO 3 chain that is expanded by 19% in perovskite cell volume and rotated by 45° relative to the matrix lattice. Further quantitative analysis of the defect demonstrates that the ferroelectric polarization distribution around the dopant-induced defects displays a "head-to-head" configuration, indicating the accumulation of negative charges. Supported by electron energy loss spectroscopy and density functional theory calculations, the linear defect leads to one-dimensional metallic channels embedded within the ferroelectric BiFeO 3 matrix. These atomic-scale findings establish the structure-functionality relationship of extrinsic defect in Nb-doped BiFeO 3 thin films, providing new insight into their fundamental understanding and potential use in low-dimensional nanoelectronics devices.

High-resolution Electron Microscopy Investigation on Stacking Faults in SrBi2Ta2O9ferroelectric Thin Films Prepared by Metalorganic Deposition

Interfacial Structures And Structural Defects Of Srbi2ta2o9 Ferroelectric Thin Films Prepared By Mod And Pld

Stacking Faults and Their Effects on Ferroelectric Properties in Strontium Bismuth Tantalate

Atomic-Scale Microstructures Of Srbi2ta2o9 (Sbt) Ferroelectric Thin Films Prepared By Mod And Pld For Ferams Applications

Atomic Structures of Planar Defects in 0.95(na0.5bi0.5)tio3–0.05batio3 Lead-Free Piezoelectric Thin Films

Atomic Scale Investigation of Planar Defects in 0.95na0.5bi0.5tio3–0.05batio3 Thin Films on SrTiO3 (001) Substrates

Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

The atomic configuration and metallic state of extrinsic defects in Nb-doped BiFeO 3 thin films

Microstructures of SBT materials investigated by transmission electron microscopy

Defect Engineering for Nontrivial Multiferroic Orders in SrTiO3

Investigation of the structural and electrical properties of Sr1−xBi2.2Ta2O9 thin films with deficient Sr contents

Dissociation of Grain Boundary Dislocations in SrBi2Ta2O9 Ferroelectric Thin Films

Domain Structures and Planar Defects in Srbi2ta2o9 Single Crystals Observed by Transmission Electron Microscopy

High-Resolution X-Ray Diffraction and Transmission Electron Microscopy of Multiferroic Bifeo3 Films

Stacking Faults and Growth Mechanism of in Situ TiB Whiskers and Interface Structures in SPSed TiB/Ti(FeMo) Composites

Structural Investigation of Interface and Defects in Epitaxial Bi3.25la0.75ti3o12 Film on Srruo3/Srtio3 (111) and (100)

Investigation of {111} Stacking Faults and Nanotwins in Epitaxial BaTiO3thin Films by High-Resolution Transmission Electron Microscopy

Electron microscopy study of ferroelectric domains and microstructural defects in Bi- and Zn-modified Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 piezoelectric ceramics

Emergence of Critical Thickness and Multifaceted Role of Stacking Faults in High Misfit Hexagonal Ferrites Films

Effect of titanium substitution on film structure and ferroelectric properties of Sr-deficient Sr0.75Bi2.35Ta2O9 thin films

Microstructural Defects and Their Formation Mechanisms in Ba_(0.75)Sr_(0.25)TiO_3 Epitaxial Film