Abstract:The manipulation of individual intrinsic point defects is crucial for boosting the thermoelectric performances of n-Bi2Te3-based thermoelectric films, but was not achieved in previous studies. In this work, we realize the independent manipulation of Te vacancies VTe and antisite defects of TeBi and BiTe in molecular beam epitaxially grown n-Bi2Te3 films, which is directly monitored by a scanning tunneling microscope. By virtue of introducing dominant TeBi antisites, the n-Bi2Te3 film can achieve the state-of-the-art thermoelectric power factor of 5.05 mW m–1 K–2, significantly superior to films containing VTe and BiTe as dominant defects. Angle-resolved photoemission spectroscopy and systematic transport studies have revealed two detrimental effects regarding VTe and BiTe, which have not been discovered before: (1) The presence of BiTe antisites leads to a reduction of the carrier effective mass in the conduction band; and (2) the intrinsic transformation of VTe to BiTe during the film growth results in a built-in electric field along the film thickness direction and thus is not beneficial for the carrier mobility. This research is instructive for further engineering defects and optimizing electronic transport properties of n-Bi2Te3 and other technologically important thermoelectric materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c01039?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c01039</a>.Additional RHEED patterns, XRD patterns, ARPES spectra, and electronic transport properties of Bi2Te3 films grown at different substrate temperatures Tsub and Te/Bi flux ratios R, atomic resolution STM topographies of intrinsic point defects in Bi2Te3, and additional STM images as well as the statistical analysis of the density of surface point defects (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c01039/suppl_file/nn1c01039_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Mechanically induced stacking faults and their impact on electrical transport properties in SnSe

Nanoscale Stacking Faults Induced Low Thermal Conductivity in Thermoelectric Layered Metal Sulfides

Elucidating the Role of Stacking Faults in TlGaSe$_{2}$ on its Thermoelectric Properties

High-resolution Electron Microscopy Investigation on Stacking Faults in SrBi2Ta2O9ferroelectric Thin Films Prepared by Metalorganic Deposition

Stacking Faults and Their Effects on Ferroelectric Properties in Strontium Bismuth Tantalate

New Insights on Stacking Fault Behavior in Twin Induced Plasticity from Meta-Atom Molecular Dynamics Simulations

Nanotwin-induced ductile mechanism in thermoelectric semiconductor PbTe

Superstrengthening Bi_{2}Te_{3} Through Nanotwinning.

Modified Generalized Stacking Fault Energy Surface of II-VI Ionic Crystals from Excess Electrons and Holes

Thermally Induced Structural Evolution and Nanoscale Interfacial Dynamics in Layered Metal Chalcogenides

Enhancing thermoelectric performance of Sb2Te3 through swapped bilayer defects

Atomistic Calculations of the Generalized Stacking Fault Energies in Two Refractory Multi-Principal Element Alloys

Unveiling Phonon Frequency-Dependent Mechanism of Heat Transport Across Stacking Fault in Silicon Carbide

Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb

Shear induced deformation twinning evolution in thermoelectric InSb

Stability of stacking fault tetrahedron in twin boundary bicrystal copper under shear

Identifying the Manipulation of Individual Atomic-Scale Defects for Boosting Thermoelectric Performances in Artificially Controlled Bi 2 Te 3 Films

Emergence of Critical Thickness and Multifaceted Role of Stacking Faults in High Misfit Hexagonal Ferrites Films

Unraveling the dynamics of stacking fault nucleation in ceramics: A case study of aluminum nitride