Abstract:The microscopic arrangement of atoms and molecules is the determining factor in how materials behave and perform. Beyond the long-range periodicity, the local disorder with local structures deviating from the average lattice structure plays a vital role in determining the physical properties of the phonon, electron and spin subsystems in crystalline functional materials. Experimentally characterizing the 3D atomic configuration of such local disorder and correlating it with the advanced functions remain a big challenge. Time-domain evolution of the local disorder, either static or dynamical, is lost due to the characterization at equilibrium state with conventional probing techniques. With the combination of femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we exclusively identify the static local disorder and the local anharmonicity of it in thermoelectric SnSe. The ultrafast structural dynamics in time domain reveal a dominant static off-symmetry displacement of Sn (~0.4 angstrom) and the anharmonicity of this local disorder induces an ultrafast atomic displacement within 100 fs after photoexcitation. The microscopic picture of the local anharmonicity indicates a direct and first signature of the THz Einstein oscillators in real space. Therefore, a glass-like thermal transport channel with the local disorder, the Einstein oscillators and the local anharmonicity, updates the fundamental insight into the long-debated ultralow thermal conductivity in SnSe. The local disorder over one to a few unit cells is pervasive and indispensable in thermoelectric materials, multiferroic materials and correlated electronic materials. Our method of revealing the 3D local disorder and the local correlated interactions by ultrafast structural dynamics will inspire broad interest in construction of the structure-property relationship in material science.

Mechanically induced stacking faults and their impact on electrical transport properties in SnSe

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Local Lattice Distortion Mediated Formation of Stacking Faults in Mg Alloys

Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

Elucidating the Role of Stacking Faults in TlGaSe$_{2}$ on its Thermoelectric Properties

Defects controlled hole doping and multivalley transport in SnSe single crystals

Nanoscale Stacking Faults Induced Low Thermal Conductivity in Thermoelectric Layered Metal Sulfides

Creating High-Dense Stacking Faults and Endo-Grown Nanoneedles to Enhance Phonon Scattering and Improve Thermoelectric Performance of Cu2SnSe3

Stacking Pattern Induced High ZTs in Monolayer SnSSe and Bilayer SnXY (X/Y = S, Se) Materials with Strong Anharmonic Phonon Scattering

Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Identification and Manipulation of Atomic Defects in Monolayer SnSe

Modified Generalized Stacking Fault Energy Surface of II-VI Ionic Crystals from Excess Electrons and Holes

Native Atomic Defects Manipulation for Enhancing the Electronic Transport Properties of Epitaxial SnTe Films

Transport behavior and thermoelectric properties of SnSe/SnS heterostructure modulated with asymmetric strain engineering

Engineering the Near-Edge Electronic Structure of Snse Through Strains

Femtosecond electron diffraction reveals local disorder and local anharmonicity in thermoelectric SnSe

Unravelling the regulating role of stacking pattern on the tunable dipole, mechanical behavior and carrier mobility for asymmetric Janus SnSSe bilayer

Charge Transport in Thermoelectric SnSe Single Crystals

Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes

Lattice plainification advances highly effective SnSe crystalline thermoelectrics