Microstructures of SBT materials investigated by transmission electron microscopy

朱信华,朱健民,周舜华,李齐,刘治国,闵乃本

DOI: https://doi.org/10.3969/j.issn.1000-6281.2002.03.012

2002-01-01

Abstract:In this work, the microstructures of SrBi2Ta2O9 (SBT) materials including (001) oriented single crystal, ceramics, and thin films with (001) orientation, were investigated by transmission electron microscopy. The 90° domain walls in SBT single crystal and ceramics were identified by the 90° rotation relationship in the electron diffraction pattern along the [001] zone axis. They exhibit irregular configurations. The structural planar defects of anti phase boundaries (APBs) in the SBT single crystal were also observed, which exhibit ribbonlike morphologies. Four fold vertices formed by joint of four APBs are observed as predominant singularities, and are explained by a four state spin clock model. Some three fold vertices are also observed since both threefold and fourfold vertices are energetically allowed in the present model. Dissociation of grain boundary dislocations (GBDs) in the SBT thin films with (001) orientation was also examined. Small angle (8 2°) [001] tilt grain boundaries with a boundary plane close to the (110) plane exhibit partial GBDs separated by stacking fThe dissociated grain boundary structures have twice the number of GBDs and interdislocation core channel width smaller than that Frank's geometrical rule predicts. The edge dislocations at small angle tilt grain boundary are deleterious to the leakage current of SBT films since the edge dislocation cores can providepinning centers for the space charges in SBT films, resulting in high leakage current and poor fatigue resistance characteristics.