Flexural Strength Change of Silicon Nitride Implanted by High Dose Titanium Ions

JZ Zhang,XY Ye,J Chang,K Tao
DOI: https://doi.org/10.1016/s0167-577x(96)00212-1
IF: 3
1997-01-01
Materials Letters
Abstract:Silicon nitride ceramics were modified by Ti-ion implantation in a MEVVA (MEtal Vapor Vacuum Arc) implanter. The influence of implantation parameters was studied by varying the ion dose over a wide range. The samples were implanted with 80 keV Ti ions with doses from 1 × 1017 to 3 × 1018 Ti/cm2 at temperatures between 400 and 750 °C. The implantation dose strongly influences the flexural strength and microhardness of silicon nitride, increasing the flexural strength up to 14% relative to unimplanted silicon nitride.
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