Change of Sheet Resistance of High Purity Alumina Ceramics Implanted by Cu and Ti Ions

DX Li,JZ Zhang,M Yu,JC Kang,WZ Li
DOI: https://doi.org/10.1016/j.apsusc.2005.01.141
IF: 6.7
2005-01-01
Applied Surface Science
Abstract:High purity alumina ceramics (99% Al2O3) was implanted by copper ion and titanium ion in a metal vapour vacuum arc (MEVVA) implanter, respectively. The influence of implantation parameters was studied varying ion fluence. The samples were implanted by 68keV Cu ion and 82keV Ti ion with fluences from 1×1015 to 1×1018ions/cm2, respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), glancing X-ray diffraction (GXRD), scanning Auger microscopy (SAM), and four-probe method. Different morphologies were observed on the surfaces of the as-implanted samples and clearly related to implantation parameters. For both ion implantations, the sheet resistances of the alumina samples implanted with Cu and Ti ion fluences of 1×1018ions/cm2, respectively, reached the corresponding minimum values because of the surface metallization. The experimental results indicate that the high-fluence ion implantation resulted in conductive layer on the surface of the as-implanted high purity alumina ceramics.
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