Abstract:To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C–SiC on 150mm Si wafers was investigated at 1000°C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapor deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750°C before the temperature was ramped up to 1000°C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C–SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ±0.02nm/cycle by adjusting the supply volume of SiH4 and C2H2. The thickness nonuniformity across wafer was controlled with ±1%. For a prime grade 150mm virgin Si(100) wafer, the bow increased from 2.1 to 3.1μm after 960nm SiC film was deposited. The SiC films are naturally n type conductivity as characterized by the hot-probe technique.

Low temperature growth of CeO2(111) layer on Si(100) using dual plasma deposition

Investigation of Growth, Structural and Optical Properties of CeO2 Nanocrystalline Thin Films Prepared by Pulsed Spray-Evaporation Chemical Vapor Deposition (PSE-CVD)

Epitaxial Growth of CeO2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering

Epitaxial growth of CeO2(1 0 0) films on Si(1 0 0) substrates by dual ion beams reactive sputtering

Epitaxial Growth of CeO2 films on Si(100) Substrate and Its Electrical Properties

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD

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Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

Influence of temperature and ion kinetic energy on surface morphology of CeO2 films prepared by dual plasma deposition

Substrate Temperatures and Gd2O3-Doped CeO2 Electrolyte Film Growth by Reactive RF Magnetron Sputtering

Study on Growth and Optical Properties of ZnO Thin Films on Si(111) Substrate by Plasma Assisted Molecular Beam Epitaxy (P-MBE)

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Interfacial and Structural Characteristics of Ceo2 Films on Silicon with A Nitrided Interface Formed by Nitrogen-Ion-Beam Bombardment

The Growth of Si on Sic Complex Substrate by Cvd

Growth of textured LiNbO3 thin film on Si (111) substrate by pulsed laser deposition

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD

Low-temperature Deposition of Α-Al2o3 Films by Reactive Sputtering Al+α-Al2O3 Target

Low-Temperature Synthesis of C-60 Thin Films by Ionized Cluster Beam Deposition Technique