Structure and Residual Stress in Γ-Lialo2 Layer Fabricated by Vapor Transport Equilibration on (0 0 0 1) Sapphire

SZ Li,WQ Yang,YZ Wang,JF Liu,SM Zhou,J Xu,P Han,R Zhang
DOI: https://doi.org/10.1016/j.jcrysgro.2005.04.109
IF: 1.8
2005-01-01
Journal of Crystal Growth
Abstract:gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.
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