Abstract:The dynamics of anomalous changes in the microstructure, as well as optical and electrical properties of microcrystalline VO 2 thin films on Si substrates during a reversible temperature-induced metal-insulator phase transition (MIT), were studied by high-resolution X-ray diffractometry (XRD), micro-Raman spectroscopy, and resistivity measurements. Temperature-dependent XRD studies of microcrystalline VO 2 films revealed the coexistence of monoclinic VO 2 (M1) and tetragonal VO 2 (R) structural phases near the MIT, attributable to deformation inhomogeneities and grain size variations. It was determined that inhomogeneous microstructural distortion is the primary factor influencing the MIT in strained VO 2 films. Concurrently, significant variations in the resistivity hysteresis were observed in association with the phase transitions. The structural phase transition (SPT) in VO 2 films was investigated via temperature-dependent micro-Raman spectroscopy, which elucidated the microstructural influence on the MIT. As the VO 2 (M1) temperature approached the critical SPT temperature (340 K), the narrow Raman spectrum of the insulating phase transitioned into a broadband spectrum characteristic of the metallic VO 2 (R) phase, marked by four pronounced peaks at approximately 230 cm −1 (B 1g ), 400 cm −1 (E g ), 550 cm −1 (A 1g ), and 635 cm −1 (B 2g ). The analysis of the V–V and V–O vibrational modes in VO 2 indicates that alterations in the V–V and V–O bond lengths are crucial to the temperature-driven SPT from the low-temperature monoclinic VO 2 (M1) phase to the high-temperature tetragonal VO 2 (R) phase. The observed hysteretic temperature dependence of the Raman intensities for V–V and V–O modes shows a quantitative correlation with the resistivity measurements of the VO 2 films, providing insights into the interplay between the SPT and the MIT. The results obtained are pivotal for comprehending the structural and electronic behaviors of nanoscale films and hold significant implications for their application in functional devices.

Effect of As-Deposited Residual Stress on Transition Temperature of VO2 Films

Effects of Film Thickness on the Residual Stress of Vanadium Dioxide Thin Films Grown by Magnetron Sputtering

Analysis of Thermal Stress in Vanadium Dioxide Thin Films by Finite Element Method

Effect of Temperature on Residual Stress and Mechanical Properties of Ti Films Prepared by Both Ion Implantation and Ion Beam Assisted Deposition

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Effect of heating/cooling dynamics in the hysteresis loop and tunable IR emissivity of VO2 thin films.

Strong substrate influence on atomic structure and properties of epitaxial VO2 thin films

Stabilization of the VO2(M2) Phase and Change in Lattice Parameters at the Phase Transition Temperature of WXV1- XO2 Thin Films

Combined Effect of Temperature Induced Strain and Oxygen Vacancy on Metal‐Insulator Transition of VO 2 Colloidal Particles

Effect of Tungsten on the Thermal Hysteresis in the Resistivity of Vanadium Dioxide Films

Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

Wet-Etching Induced Abnormal Phase Transition in Highly Strained VO2/TiO2 (001) Epitaxial Film

Spectral Assignments in the Infrared Absorption Region and Anomalous Thermal Hysteresis in the Interband Electronic Transition of Vanadium Dioxide Films

Correlation of metal-to-insulator transition and strain state of VO2 thin films on TiO2 (110) substrates

Thermal transition behaviors of vanadium pentoxide film during post-deposition annealing

Effect of structural disorder on the modification of V–V and V–O bond lengths at the metal-dielectric phase transition in VO 2 thin films

Theoretical Study On The Tungsten-Induced Reduction Of Transition Temperature And The Degradation Of Optical Properties For Vo2

Stress variation with temperature/time and its correlation to film structure and deposition parameters

Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films