Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process

Peng Zhang,Ting Huang,Qinghu You,Jinzhong Zhang,W. W. Li,Jiada Wu,Zhigao Hu,Junhao Chu

DOI: https://doi.org/10.1088/0022-3727/48/48/485302

2015-01-01

Abstract:The phase transition behaviour of vanadium dioxide (VO2) with different thicknesses has been investigated by temperature-dependent optical transmittance and Raman spectra. It is found that the crystal orientation has a great effect on the metal-insulator transition (MIT) of VO2 films. The x-ray diffraction (XRD) analysis shows that the films are polycrystalline and exhibit the characteristics of the monoclinic phase. The preferential growth crystal orientation (0 2 0) is converted to the ((1) over bar 1 1) plane with the film thickness increasing. It is believed that the ((1) over bar 1 1) plane is the reflection of a twinned structure with (0 1 1) crystal orientation, which will lead to the arrangements of oxygen atoms and vanadium atoms deviating from the pure monoclinic structure. It is found that the highest order transition (E-3) is highly susceptible to the crystal orientation, whereas the lowest order transition (E-1) is nearly unaffected by it. The E-3 exhibits an anomalous temperature dependence with an abrupt blue-shift (similar to 0.5 eV) in the vicinity of the metal-insulator transition (MIT) for VO2 film with a thickness of 84 nm. The findings show that the empty sigma* band can be driven close to the Fermi level when the (0 2 0) orientation is converted to the ((1) over bar 1 1) orientation. Compared to the VO2 films with thicknesses of 39 and 57 nm, the E-3 decreases by 0.8 eV and the E-2 increases by about 0.1 eV at the insulator state for the VO2 film with a thickness of 84 nm. The abnormal electronic transition and the variation of energy band is likely caused by the lattice distortion and V-V dimerisation deviation from the monoclinic a(m) axis.