Abstract:Switching of vanadium dioxide (VO2) from low-temperature insulating phase to high-temperature rutile phase can be induced by photons with a certain energy. Photoinduced insulator-metal transition is found experimentally in VO2 polycrystalline film by photos with energy even below 0.67 eV. However, insulator-metal transition in single crystal can only be induced when photo energyis above 0.67 eV. In order to understand these experimental phenomena, we make a first-principle study on low-temperature non-magnetic M1 phase of VO2 with oxygen vacancy by density functional theory calculations based on the Heyd-Scuseria-Ernzerhof screened hybrid functional. According to symmetry, M1 phase has two kinds of different oxygen vacancies, O1 and O2 vacancies. Calculations are made on structures and electronic properties of nonmagnetic M1 phases with O1 and O2 vacancies, respectively. The present theoretical results show that neither the short vanadium-vanadium (V—V) bond length near O1 or O2 vacancy nor the lattice parameters almost change but the long V—V bond length near O1 or O2 vacancy decreases due to the oxygen vacancy. The long V—V bond lengths near O1 and O2 vacancies are about 2.80 ? and 2.95 ?, respectively, but the long V—V bond length is 3.17 ? in pure M1. The insulating band gap is opened between V 3d bands, and hybridization happens between V 3d and O 2p orbitals. Furthermore, the present theoretical results demonstrate that the band gap of pure nonmagnetic M1 is 0.68 eV while M1 with O1 vacancy, O2 vacancy, and two oxygen vacancies including O1 and O2, have band gaps of 0.23 eV, 0.20 eV, and 0.15 eV, respectively. The band gap decreases probably because oxygen vacancy results in the decease of the long V—V bond length near it. The present results can explain the experimental results well.

Oxygen Pressure Manipulations on the Metal–insulator Transition Characteristics of Highly (0 1 1)-Oriented Vanadium Dioxide Films Grown by Magnetron Sputtering

Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal–insulator transition process

Thermal-stimulated Phase Transition of Vanadium Dioxide Enabling Versatile Transduction and Smart Applications

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Phase Transition Engineering of Vanadium Dioxide Induced by Oxygen Vacancies

Combined Effect of Temperature Induced Strain and Oxygen Vacancy on Metal‐Insulator Transition of VO 2 Colloidal Particles

The effect of oxygen flow rate on metal–insulator transition (MIT) characteristics of vanadium dioxide (VO2) thin films by pulsed laser deposition (PLD)

High-strain-induced local modification of the electronic properties of VO$_2$ thin films

Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–insulator Transition Characteristics

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Moderating oxygen deficiency induced better thermochromic properties of monoclinic vanadium dioxide thin films

Enhanced Metal-Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process

Oxygen Vacancy Induced Band Gap Narrowing of the Low-Temperature Vanadium Dioxide Phase

Spectral Assignments in the Infrared Absorption Region and Anomalous Thermal Hysteresis in the Interband Electronic Transition of Vanadium Dioxide Films

Oxygen Vacancies-Induced Metal-Insulator Transition in La2/3sr1/3vo3 Thin Films: Role of the Oxygen Substrate-To-Film Transfer

Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film

Tuning Phase Transition Temperature of VO2thin Films by Annealing Atmosphere

Intrinsic Evolutions Of Optical Functions, Band Gap, And Higher-Energy Electronic Transitions In Vo2 Film Near The Metal-Insulator Transition Region

Oxygen Pressure Dependent VO2 Crystal Film Preparation and the Interfacial Epitaxial Growth Study

Oxygen Pressure Induced Structure, Morphology and Phase-Transition for VO2/c-sapphire Films by PLD