Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films

Chuen-Lin Tien,Chun-Yu Chiang,Ching-Chiun Wang,Shih-Chin Lin

DOI: https://doi.org/10.3390/ma17102382

IF: 3.4

2024-05-17

Materials

Abstract:The undoped and tungsten (W)-doped vanadium dioxide (VO2) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3–5%) on the electrical, optical, structural, and thermo-mechanical properties of VO2 thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400–750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO2 thin film decreases from −0.276 GPa to −0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO2 thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO2 thin films.

materials science, multidisciplinary,metallurgy & metallurgical engineering,physics, applied,chemistry, physical, condensed matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to optimize the performance of vanadium dioxide (VO₂) thin films in applications such as smart windows, photoelectric switches, and intelligent heat dissipation devices by studying the influence of different tungsten doping contents (from 3% to 5%) on the optical, electrical, structural, and thermodynamic properties of these films. Specifically, the author focuses on the following aspects:

1. **Optical properties**: The influence of different tungsten doping contents on the transmittance in the visible light (400 - 750 nm) and infrared bands (2.5 µm to 5.5 µm) was studied. The results show that as the tungsten doping content increases, the transmittance in both the visible light and infrared bands decreases.

2. **Electrical properties**: The influence of tungsten doping on the electrical properties of the films was explored, especially the change in the metal - insulator transition temperature.

3. **Structural properties**: The influence of different tungsten doping contents on the microstructure of the films was analyzed by X - ray diffraction (XRD) and scanning electron microscopy (SEM).

4. **Thermodynamic properties**: The influence of different tungsten doping contents on the residual stress and surface roughness of the films was measured. The results show that as the tungsten doping content increases, the residual stress decreases, but the surface roughness increases.

Through these studies, the author hopes to find the optimal tungsten doping content to achieve better optical and electrical properties of vanadium dioxide films near room temperature, thereby improving their performance and stability in practical applications.