Effect of Tungsten on the Thermal Hysteresis in the Resistivity of Vanadium Dioxide Films

O. Ya. Berezina,P. P. Boriskov,E. A. Tutov,V. P. Zlomanov,N. A. Avdeev
DOI: https://doi.org/10.1134/S0020168522070056
2022-10-08
Inorganic Materials
Abstract:We analyze the effect of tungsten doping of sol–gel derived polycrystalline vanadium dioxide films on the temperature dependence of their resistivity across the metal–semiconductor transition. Experimental resistivity hysteresis data demonstrate that, with increasing doping level, the phase transition temperature of the films decreases, their hysteresis loop extends over a broader temperature range, and their resistivity jump drops. We have constructed coercive temperature distribution functions and compared them with size distributions of crystalline grains in the undoped and doped films. The results lead us to conclude that tungsten doping of vanadium dioxide has no effect (at least up to 6 at % W) on structure formation in polycrystalline films. The observed changes in phase transition parameters upon doping are, most likely, caused by the increase in donor defect density and the large scatter in dopant concentration in individual grains.
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