The Study of Dielectric Properties of ZnO-TiO2 Microwave Ceramic Sinterd at Low-temperature and Chip Multilayer Bandpass Filter

Qi-long ZHANG,Hui YANG,Jia-li ZOU,De-long LU
DOI: https://doi.org/10.3969/j.issn.1005-6122.2006.01.016
2006-01-01
Abstract:The research mode which includes material properties,components design and preparation technics was adopted.Firstly,The dielectric properties of ZnO-TiO_2 microwave ceramic sinterd at low-temperature was studied.Secondly,commercial 3D electromagnetic analysis software HFSS were used to model,simulate and optimize for the microwave characteristics of chip multilayer bandpass filter.Lastly,chip multilayer bandpass filter were preparated by LTCC technology.For ZnO-TiO_2 ceramic sintered at temperature from 895 to 910℃,hexagonal ZnTiO_3 and rutile(TiO_2) lies stably.The ε_r value of 27.05,Qf value of 19,822(at 6GHz) and τ_f value of 2ppm/℃ were obtained for ZnO-TiO_2 ceramics sintered at 900℃ for 3h.The material is compatible with Ag electrodes.The simulation indicates that dielectric constant warp is key factor to the design and preparation of chip mulilayer bandpass filter.The simulations were shown to be in good agreement with the experimental results.The chip multilayer bandpass filter in this paper is suitable for SMT.
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