Abstract:Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge layers can be used in the fabrication of passive components such as waveguides and resonators. A cost-effective technology for the heteroepitaxial growth of Ge on Si will be highly beneficial. In this work, a simplified chemical vapor deposition reactor was assembled in-house to deposit Ge films. Epitaxial Ge film growth on Si (100) substrates was accomplished without requiring ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby minimizing the economic and thermal budget of the process. Films were deposited using digermane (Ge2H6) precursor in a single step at a process temperature of 350 °C and chamber pressures of 1–10 Torr. Films were achieved at high chamber background pressures (>10−6 Torr) by implementing a thorough ex situ substrate cleaning process and optimizing times for wafer loading, chamber pumping and initiation of film deposition. Transmission electron microscopy and X-ray diffraction were used to confirm the epitaxial growth and crystalline quality of the obtained films. Optical properties of the films were characterized using Raman spectroscopy, Photoluminescence and Infra-red spectroscopy.

Low Temperature Epitaxial Growth of Si and Ge Films on C-Si Substrate by Hot-wire CVD

Ultralow Temperature Epitaxial Growth of Silicon-Germanium Thin Films on Si(001) Using GeF4

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

High quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by two-step approach

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Growth of High Quality Ge Epitaxial Films on Si Substrate by Low Temperature Buffer Technique

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Low Temperature Hetero‐Epitaxial Growth of 3c‐sic Films on Si Utilizing Microwave Plasma CVD

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

Ultralow Temperature Ramping Rate of LT to HT for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Growth of Near Planar Si0.5 Ge0.5 Epitaxial Layers Directly on Si Substrate by UHV/CVD at 500℃

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD