Abstract:Pb(Zr,Ti)O-3 (PZT) is a well known ferroelectric material for nonvolatile memory applications. However, interfacial diffusion and reaction are the main issues when PZT films were deposited directly on silicon. One way to overcome this obstacle is to deposit a barrier layer between PZT and Si. In this work, Pt/PbZr0.53Ti0.47O3/LaAlO3/Si structure has been fabricated to study the electric properties. PbZr0.53Ti0.47O3 films with 300 nm thickness and LaAlO3 buffer layers with 30 nm thickness were prepared by pulsed laser deposition technique on n-type Si (100) substrates at 650 degreesC and 450 degreesC, respectively. X-ray diffraction shows that polycrystalline PbZr0.53Ti0.47O3 film was formed on amorphous LaAlO3 buffer layer. The Auger electron spectrometer demonstrates that LaAlO3 buffer layer effectively prevent Si and Ti, Ph interdiffusion between PZT and Si substrates. For the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si Structure, the current density-voltage measurement showed a typical leakage current density of about 10(-7) A/cm(2) at 8 V applied voltage. Furthermore, it has been measured that the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si heterostructures exhibit ferroelectric switching properties, showing a memory window as large as 2 V under a ramp rate of 200 mV/s at I MHz.

PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer

Pb(Zr,Ti)O-3 Thin Films Prepared on Pbtio3/Si(100) by Chemical Solution Decomposition Technique

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

Properties of PbZr<sub>x</sub>Ti<sub>1−x</sub>O<sub>3</sub>/CeO<sub>2</sub>/SiO<sub>2</sub>/Si structure

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Properties Of Pbzr(X)(T)I(1-X)O(3)/Ceo2/Sio2/Si Structure

Properties of multi-layered PZT films

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Top-Seeded Solution Growth And Properties Of High T-C Pb(In1/2nb1/2)O-3-Pb(Zn1/3nb2/3)O-3-Pbtio3 Single Crystals

Ferroelectric Properties of Bilayer Structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) Thin Films on Pt/TiO2/SiO2/Si Substrates

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

Effect Of Annealing Temperature On Properties Of Sputtered Pzt Thin Films

Fabrication And Characterization Of In-Plane Polarized Pzt Films With Interdigital Electrodes

Influence of doping and buffer layers on Pb(Zr,Ti)O3 thin films derived from inorganic zirconium precursor

Insulating properties of rapid thermally processed Bi2Ti2O7 thin films by a chemical solution decomposition technique

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Structural and Electrical Properties of Bi3.25la0.75ti3o12 and Bi3.25pr0.75ti3o12 Thin Films for Memory Applications

Preparation of Pb(Zr<sub>0.52</sub>Ti484848)O<sub>3</sub> thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing