Abstract:We present analytical models and experimental results to describe low-defect density growth (∼ 6 × 10 5 /cm 2 ) of highly mismatched antimonides on Si and GaAs substrates, with strain relief achieved at the growth interface through periodic, 90° interfacial misfit dislocations (IMF). We use molecular mechanics (MM) based modeling techniques to understand, at the atomic level, the spontaneous formation and energetics of these IMF. We have modeled, grown and characterized two systems extensively, these are - AlSb on Si with ∼ 13mismatch and GaSb on GaAs with 7.83lattice mismatch. Growth of these materials by molecular beam epitaxy (MBE) and subsequent High-Resolution Transmission Electron Microscopy (HR-TEM) has indicated that there is no tetragonal distortion in these two systems despite the high lattice mismatch. Instead, the mismatched epi-layers spontaneously form periodic IMF arrays that run along both [110] and [1-10] directions and relieve almost 100of the strain in a few monolayers of deposition. To model this form of strain relief, we use existing theories of strain relief adapted for very high strain conditions and we also use bond energetics to model the strain-relieving interface. The IMFs in these systems are periodic and so is the deviation in bond lengths and bond angles, which restricts our calculation space to a finite number of elements. We shall also demonstrate extensive growth and characterization results of the materials grown with a particular emphasis on the strain-relieving interface to show excellent agreement of the experimental data with the proposed models. The high quality and low-defect density in AlSb grown on Si, has helped us demonstrate optically pumped IR VCSELs and edge emitters monolithically on Si (001) and this data will also be presented.

A Theoretical Model for the Tilt of the Gaas/Si Epilayers

Investigation of crystallographic tilting in GaSb/GaAs heteroepitaxial structure by high-resolution X-ray diffraction

Tilted Angels of ZnTe and CdTe Epilayers Grown on Si(211) and GaAs(211)B Substrates by MBE

Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching

Investigation of the Crystal Tilts in Laterally Epitaxial Overgrowth Gan Films Formed by Hydride Vapor Phase Epitaxy

Distribution of Dislocations in GaSb and InSb Epilayers Grown on GaAs (001) Vicinal Substrates

Assessment of the Structural Properties of Gaas/Si Epilayers Using X-Ray (004) and (220) Reflections

Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

Coexistence Of Epitaxial Lattice Rotation And Twinning Tilt Induced By Surface Symmetry Mismatch

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

Study of strain distribution in GeSi/Si strained heterostructure

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Modeling of Ge surface segregation in vapor-phase deposited Si1−xGex thin films

Investigation of GaSb Epilayer Grown on Vicinal GaAs(001) Substrate by High Resolution X-Ray Diffraction

In-plane epitaxy strain tuning intralayer and interlayer magnetic couplings in CrSe2 and CrTe2 mono- and bi-layers

Crystal Tilts in Epitaxially Laterally Overgrown GaN Films Determined by Four-Circle X-Ray Diffraction

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors

Surface properties of epitaxially grown crystals

Heteroepitaxy of Cdte on Tilting Si(211) Substrates by Molecular Beam Epitaxy

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies