Abstract:This paper presents work on InAs/GaSb superlattice structural property studies. The superlattice materials were grown by molecular beam epitaxy and measured by high resolution x-ray diffraction, and measured x-ray rocking curves were fitted to the simulated ones in order to fully analyze the superlattice structures. A four-layer model including an InAs layer, a GaSb layer and two interface layers was used for simulation. The results show that the two interface layers are ternary compounds of InSbAs, which have, respectively, an Sb composition of 0.99 at the InAs-on-GaSb interfaces and an Sb composition of 0.01 at the GaSb-on-InAs interfaces. This is the first article, to our knowledge, on the detailed analysis of the InAs/GaSb superlattice interface structures. The experiments also demonstrate that the As flux during the epitaxy growth affects the interface layer InSbAs compositions and hence the lattice mismatch between the superlattices and the substrates. With an As beam equivalent pressure change from 1 × 10−5 to 3 × 10−6 Torr, the lattice mismatch decreases from 3.2 × 10−3 to 5 × 10−4. Measurements on and analysis of Bragg peak broadening under different diffraction geometries show that the broadening depends on both the superlattice period and the lattice mismatch.

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Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

Investigation of crystallographic tilting in GaSb/GaAs heteroepitaxial structure by high-resolution X-ray diffraction

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers

Method for measurement of lattice parameter of cubic GaN layers on GaAs (0 0 1)

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer

Investigation of GaSb Epilayer Grown on Vicinal GaAs(001) Substrate by High Resolution X-Ray Diffraction

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Characterization of GaAs Thin Films Grown by Molecular Beam Epitaxy on Si-on-insulator

High-resolution X-ray Diffraction and Micro-Raman Scattering Studies of Ge(:Ga) Thin Films Grown on GaAs (001) Substrates by MOCVD