Sb Doping Behavior and Its Effect on Crystal Structure, Conductivity and Photoluminescence of ZnO Film in Depositing and Annealing Processes

T. Yang,B. Yao,T. T. Zhao,G. Z. Xing,H. Wang,H. L. Pan,R. Deng,Y. R. Sui,L. L. Gao,H. Z. Wang,T. Wu,D. Z. Shen

DOI: https://doi.org/10.1016/j.jallcom.2011.02.080

IF: 6.2

2011-01-01

Journal of Alloys and Compounds

Abstract:The Sb-doped ZnO (ZnO:Sb) and undoped ZnO films with wurtzite structure and (0 0 2) preferred orientation were deposited on Si(1 0 0) substrate at 550 degrees C. It is deduced from XRD and XPS measurements that the Sb in the as-grown ZnO: Sb has high oxidation state and dopes in the form of oxygen-rich Sb-O clusters, which results in a large inner stress and a great increase of the c-axis lattice constant. After annealing at 750 degrees C under vacuum, the c-axis lattice constant of the ZnO: Sb decreases sharply to near the value of ZnO bulk, the electrical properties change from n-type to p-type and the PL intensity ratio of the visible to ultraviolet emission band goes down greatly, as the Sb content increases from 0 to 2.1 at.%. EDS and XRD measurements indicate that some of Sb dopants escape from the ZnO: Sb films and the oxygen-rich Sb-O clusters vanished after the annealing process. The effect of the change in Sb doping behavior on crystal structure, conductivity and PL is discussed in detail. (C) 2011 Elsevier B. V. All rights reserved.