Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Low Threading-Dislocation-Density Ge Film on Si Grown on A Pitting Ge Buffer Layer

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Ultrathin Low Temperature Sige Buffer For The Growth Of High Quality Ge Epilayer On Si(100) By Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−x Ge x /Si buffer layer by RPCVD

Selective Area Growth of Ge Film on Si

Ultrasmooth Epitaxial Ge Grown on (001) Si Utilizing A Thin B-Doped Sige Buffer Layer

High-quality Strain-Relaxed Si0.72Ge0.28 Layers Grown by MBE-UHV/CVD Combined Deposition Chamber

Study of Si and Ge growth on Si(100) surface

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Ultralow Temperature Ramping Rate of LT to HT for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Growth of High Quality Ge Epitaxial Films on Si Substrate by Low Temperature Buffer Technique

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy